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MJ2955 Datasheet, PDF

Search Partnumber : Match&Start with "MJ2955" - Total : 26 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	MJ2955	47Kb/4P	COMPLEMENTARY SILICON POWER TRANSISTORS Aug-1999
ON Semiconductor	MJ2955	81Kb/4P	Complementary Silicon Power Transistors April, 2004 ??Rev. 4
ON Semiconductor	MJ2955	71Kb/4P	Complementary Silicon Power Transistors December, 2005 ??Rev. 6
STMicroelectronics	MJ2955	92Kb/7P	Complementary power transistors 29-Jan-2007
Mospec Semiconductor	MJ2955	167Kb/3P	POWER TRANSISTORS(15A,50V,115W)
Motorola, Inc	MJ2955	130Kb/4P	15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
Wing Shing Computer Com...	MJ2955	64Kb/1P	PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
Boca Semiconductor Corp...	MJ2955	174Kb/3P	COMPLEMENTARY SILICON POWER TRANSISTORS
Inchange Semiconductor ...	MJ2955	112Kb/3P	isc Silicon PNP Power Transistors
Savantic, Inc.	MJ2955	112Kb/3P	Silicon PNP Power Transistors
Savantic, Inc.	MJ2955	114Kb/3P	Silicon NPN Power Transistors
Continental Device Indi...	MJ2955	336Kb/4P	SILICON PLANAR POWER TRANSISTORS
Central Semiconductor C...	MJ2955	493Kb/2P	COMPLEMENTARY SILICON POWER TRANSISTORS
Multicomp Pro	MJ2955	449Kb/4P	Transistor, PNP TO-3 12/09/19 V1.0
Multicomp Pro	MJ2955	234Kb/5P	Complementary Power Transistors 31/05/05 V1.0
ON Semiconductor	MJ2955A	235Kb/6P	COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 1
Mospec Semiconductor	MJ2955A	193Kb/4P	POWER TRANSISTORS(15A)
Motorola, Inc	MJ2955A	235Kb/6P	15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS
Boca Semiconductor Corp...	MJ2955A	200Kb/4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
Savantic, Inc.	MJ2955A	141Kb/4P	Silicon PNP Power Transistors

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Brief Description of MJ2955

The MJ2955 is a high-power NPN bipolar junction transistor (BJT) commonly used for general-purpose high-power amplification and switching applications. Here are the key features and specifications of the MJ2955:

Transistor Type: The MJ2955 is an NPN bipolar junction transistor (BJT), meaning it consists of three semiconductor layers: P-doped (base), N-doped (emitter), and P-doped (collector).

High Power Amplification: The MJ2955 is specifically designed for high-power amplification applications where significant power levels need to be handled.

NPN Configuration: Being an NPN transistor, the MJ2955 operates with a positive voltage at the base relative to the emitter for normal operation.

High Collector-Emitter Voltage (VCEO): The MJ2955 is capable of handling relatively high collector-emitter voltage levels, typically up to 60 volts or more, making it suitable for high-voltage applications.

High Current Gain (hFE): The MJ2955 typically has a high DC current gain (hFE), allowing for efficient amplification of input signals in high-power applications.

High Power Dissipation: The MJ2955 is designed to handle high power levels, typically several watts or more, making it suitable for applications where significant power amplification is required.

TO-3 Package: It is commonly available in a TO-3 metal can package, which offers excellent thermal conductivity and mechanical robustness, making it suitable for high-power applications requiring heat dissipation.

Application: The MJ2955 is commonly used in high-power amplifier circuits, voltage regulators, power supplies, motor control circuits, and other applications where high-power amplification or switching is needed.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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