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IRFP250 Datasheet, PDF

Search Partnumber : Match&Start with "IRFP250" - Total : 44 ( 1/3 Page)

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	IRFP250	255Kb/8P	N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET Sep-2000
Samsung semiconductor	IRFP250	518Kb/7P	N-Channel Power Mosfets
Vishay Siliconix	IRFP250	1Mb/8P	Power MOSFET 16-Jun-08
	IRFP250	1Mb/9P	Power MOSFET 21-Mar-11
	IRFP250	522Kb/10P	Power MOSFET 24-Jan-2021
	IRFP250	1Mb/11P	Power MOSFET 21-Mar-11
Fairchild Semiconductor	IRFP250	669Kb/8P	200V N-Channel MOSFET
International Rectifier	IRFP250	493Kb/8P	N-Channel(Hexfet Transistors)
International Rectifier	IRFP250	122Kb/8P	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
IXYS Corporation	IRFP250	47Kb/2P	Standard Power MOSFET
IXYS Corporation	IRFP250	49Kb/1P	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
Inchange Semiconductor ...	IRFP250	444Kb/2P	iscN-Channel MOSFET Transistor
Thinki Semiconductor Co...	IRFP250	2Mb/7P	ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs
List of Unclassifed Man...	IRFP250	2Mb/31P	SEMICONDUCTORS
Fairchild Semiconductor	IRFP250A	256Kb/7P	Advanced Power MOSFET
Inchange Semiconductor ...	IRFP250A	67Kb/2P	isc N-Channel MOSFET Transistor
Thinki Semiconductor Co...	IRFP250A	2Mb/7P	ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs
Fairchild Semiconductor	IRFP250B	669Kb/8P	200V N-Channel MOSFET
ARTSCHIP ELECTRONICS CO...	IRFP250B	451Kb/7P	200V N-Channel MOSFET
Thinki Semiconductor Co...	IRFP250B	2Mb/7P	ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

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Brief Description of IRFP250

The IRFP250 is a high-power N-channel MOSFET designed for switching and amplification in power electronics applications such as inverters, power supplies, motor drives, and audio amplifiers. Originally manufactured by International Rectifier (now part of Infineon Technologies), the IRFP250 is valued for its high voltage handling, robust current capability, and low on-resistance, making it suitable for medium- to high-power systems.

This MOSFET is rated for a drain-source voltage (V_DS) of 200V and can handle continuous drain currents up to 30A, with a maximum power dissipation of around 200W when properly heat-sinked. It features a relatively low R_DS(on) (typically around 0.085Ω) and a gate threshold voltage of 2.0–4.0V, allowing it to operate efficiently with standard gate drivers. Though it is not a logic-level MOSFET, it is well suited for use with 10V gate drive signals commonly used in power switching circuits.

Packaged in a TO-247 case, the IRFP250 offers excellent thermal performance and is designed for mounting on heatsinks to manage the heat generated during high-current switching operations.

Overall, the IRFP250 is a rugged and dependable power MOSFET that offers efficient switching performance and high current handling for a wide range of industrial, automotive, and high-power electronic designs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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