IRFP250 Datasheet(PDF) - IXYS Corporation

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IRFP250 Datasheet (PDF) - IXYS Corporation

IRFP250 Datasheet PDF - IXYS Corporation


Part #	IRFP250

Download	IRFP250 Download

File Size	49.56 Kbytes

Page	1 Pages

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

Description

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

IRFP250 Datasheet (PDF)

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IRFP250 Datasheet PDF - IXYS Corporation


Part #	IRFP250

Download	IRFP250 Click to download

File Size	49.56 Kbytes

Page	1 Pages

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

Description	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

IRFP250 Datasheet (HTML) - IXYS Corporation

IRFP250 Datasheet HTML 1Page - IXYS Corporation

IRFP250 Product details

FEATURES:
• Fast switching times
• Low RDS(on) HDMOS™ process
• Rugged polysilicon gate cell structure
• Excellent high voltage stability
• Low input capacitance
• Improved high temperature reliability

APPLICATIONS:
• Switching power supplies
• Motor controls
• Audio Amplifiers
• Inverters
• Choppers

Similar Part No. - IRFP250

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	IRFP250	255Kb / 8P	N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET Sep-2000
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Fairchild Semiconductor	IRFP250	669Kb / 8P	200V N-Channel MOSFET
International Rectifier	IRFP250	493Kb / 8P	N-Channel(Hexfet Transistors)
International Rectifier	IRFP250	122Kb / 8P	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Similar Description - IRFP250

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IRFC350	45Kb / 1P	N-Channel Enhancement Mode High Ruggedness Series
NXP Semiconductors	AFM906N	701Kb / 16P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Rev. 1, 8/2016
	AFT05MS003N	1Mb / 20P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 0, 8/2015
	AFT05MS004N	1Mb / 23P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 0, 7/2014
	AFT05MS006N	996Kb / 23P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 0, 2/2014
	AFT09MP055N	965Kb / 21P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Rev. 0, 7/2013
	AFT09MS007N	1Mb / 28P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 1, 4/2014
	AFT09MS015N	861Kb / 18P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET Rev. 1, 7/2014
	MRF1K50N	827Kb / 21P	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Rev. 0, 11/2016
	MMRF1050H	424Kb / 12P	RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Rev. 0, 02/2021

About IXYS Corporation

IXYS Corporation is a technology company that specializes in the design, manufacture, and sale of power semiconductors and integrated circuits (ICs). The company was founded in 1983 and is headquartered in Milpitas, California. IXYS has a global presence, with operations and customers in over 60 countries around the world.

IXYS provides a wide range of products and solutions, including power MOSFETs, power bipolar transistors, thyristors, diodes, and ICs for power management and control applications. The company's products are used in a variety of applications, including renewable energy, industrial, automotive, and consumer electronics.

IXYS is known for its expertise in power semiconductor technology and its ability to provide high-performance and cost-effective solutions to its customers. The company is committed to innovation and research and development and is actively involved in the development of new technologies and solutions for the power semiconductor market. IXYS is a recognized leader in the power semiconductor market and continues to provide high-quality products and services to its customers.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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