| Manufacturer | Part # | Datasheet | Description |
 Samsung semiconductor |
IRF9Z24
|
287Kb/5P |
P-CHANNEL POWER MOSFETs
|
 Vishay Siliconix |
IRF9Z24
|
1Mb/8P |
Power MOSFET
20-Jun-08 |
|
IRF9Z24
|
277Kb/9P |
Power MOSFET
21-Mar-11 |
|
IRF9Z24
|
158Kb/8P |
Power MOSFET
16-Aug-2021 |
 International Rectifier |
IRF9Z24
|
174Kb/6P |
POWER MOSFET
|
 Inchange Semiconductor ... |
IRF9Z24
|
372Kb/2P |
isc P-Channel MOSFET Transistor
|
 Vishay Siliconix |
IRF9Z24L
|
2Mb/8P |
Power MOSFET
03-Jun-08 |
 International Rectifier |
IRF9Z24L
|
311Kb/10P |
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
|
 Kersemi Electronic Co.,... |
IRF9Z24L
|
825Kb/8P |
Advanced Process Technology
|
 Vishay Siliconix |
IRF9Z24LPBF
|
2Mb/8P |
Power MOSFET
03-Jun-08 |
 International Rectifier |
IRF9Z24N
|
109Kb/8P |
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
|
 Kersemi Electronic Co.,... |
IRF9Z24N
|
720Kb/8P |
Advanced Process Technology
|
 Guangdong Youtai Semico... |
IRF9Z24N
|
550Kb/8P |
-55V P-Channel MOSFET
|
 International Rectifier |
IRF9Z24NL
|
168Kb/10P |
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
|
|
IRF9Z24NL
|
179Kb/11P |
Advanced Process Technology
|
|
IRF9Z24NLPBF
|
394Kb/11P |
HEXFET Power MOSFET
|
|
IRF9Z24NLPBF
|
395Kb/11P |
Advanced Process Technology
|
|
IRF9Z24NLPBF
|
395Kb/11P |
ADVANCED PROCESS TECHNOLOGY
|
|
IRF9Z24NPBF
|
2Mb/8P |
HEXFET Power MOSFET
|
|
IRF9Z24NPBF
|
511Kb/9P |
Lead-Free
|