| Manufacturer | Part # | Datasheet | Description |
 Samsung semiconductor |
IRF9Z24
|
287Kb/5P
|
P-CHANNEL POWER MOSFETs
|
 Vishay Siliconix |
IRF9Z24
|
1Mb/8P
|
Power MOSFET
20-Jun-08
|
|
IRF9Z24
|
277Kb/9P
|
Power MOSFET
21-Mar-11
|
|
IRF9Z24
|
158Kb/8P
|
Power MOSFET
16-Aug-2021
|
 International Rectifier |
IRF9Z24
|
174Kb/6P
|
POWER MOSFET
|
 Inchange Semiconductor ... |
IRF9Z24
|
372Kb/2P
|
isc P-Channel MOSFET Transistor
|
 Vishay Siliconix |
IRF9Z24L
|
2Mb/8P
|
Power MOSFET
03-Jun-08
|
 International Rectifier |
IRF9Z24L
|
311Kb/10P
|
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
|
 Kersemi Electronic Co.,... |
IRF9Z24L
|
825Kb/8P
|
Advanced Process Technology
|
 Vishay Siliconix |
IRF9Z24LPBF
|
2Mb/8P
|
Power MOSFET
03-Jun-08
|
 International Rectifier |
IRF9Z24N
|
109Kb/8P
|
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
|
 Kersemi Electronic Co.,... |
IRF9Z24N
|
720Kb/8P
|
Advanced Process Technology
|
 Guangdong Youtai Semico... |
IRF9Z24N
|
550Kb/8P
|
-55V P-Channel MOSFET
|
 International Rectifier |
IRF9Z24NL
|
168Kb/10P
|
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
|
|
IRF9Z24NL
|
179Kb/11P
|
Advanced Process Technology
|
|
IRF9Z24NLPBF
|
394Kb/11P
|
HEXFET Power MOSFET
|
|
IRF9Z24NLPBF
|
395Kb/11P
|
Advanced Process Technology
|
|
IRF9Z24NLPBF
|
395Kb/11P
|
ADVANCED PROCESS TECHNOLOGY
|
|
IRF9Z24NPBF
|
2Mb/8P
|
HEXFET Power MOSFET
|
|
IRF9Z24NPBF
|
511Kb/9P
|
Lead-Free
|