| Manufacturer | Part # | Datasheet | Description |
 NXP Semiconductors |
BLF6G10L
|
284Kb/15P |
260 W LDMOS power transistor for base station applications
Rev. 2-12 July 2013 |
|
BLF6G10L(S)-260PRN
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10L-260PBM
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10L-260PRN
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10L-260PRN
|
284Kb/15P |
260 W LDMOS power transistor for base station applications
Rev. 2-12 July 2013 |
|
BLF6G10L-260PRN
|
284Kb/15P |
Power LDMOS transistor
Rev. 2-12 July 2013 |
|
BLF6G10L-40BRN
|
328Kb/13P |
Power LDMOS transistor
Rev. 01-9 August 2010 |
|
BLF6G10L-40BRN
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10L-40BRN
|
299Kb/11P |
Power LDMOS transistor
Rev. 3-16 November 2010 |
|
BLF6G10LS-135R
|
96Kb/10P |
Power LDMOS transistor
Rev. 01-17 November 2008 |
|
BLF6G10LS-135RN
|
152Kb/11P |
Power LDMOS transistor
Rev. 02-21 January 2010 |
|
BLF6G10LS-135RN
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10LS-160RN
|
162Kb/11P |
Power LDMOS transistor
Rev. 02-21 January 2010 |
|
BLF6G10LS-160RN
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10LS-200
|
99Kb/11P |
Power LDMOS transistor
Rev. 01-18 January 2008 |
|
BLF6G10LS-200R
|
98Kb/10P |
Power LDMOS transistor
Rev. 01-21 January 2008 |
|
BLF6G10LS-200RN
|
169Kb/11P |
Power LDMOS transistor
Rev. 02-21 January 2010 |
|
BLF6G10LS-200RN
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10LS-260PRN
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
|
BLF6G10LS-260PRN
|
284Kb/15P |
260 W LDMOS power transistor for base station applications
Rev. 2-12 July 2013 |