General description
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Features
■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:
    ◆ Average output power = 40 W
    ◆ Power gain = 20 dB
    ◆ Efficiency = 27 %
    ◆ ACPR = −41 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (800 MHz to 1000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range.