| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 Inchange Semiconductor ... |
2SJ200
|
313Kb/2P |
isc P-Channel MOSFET Transistor
|
 Toshiba Semiconductor |
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ201-Y
|
269Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P |
High-Power Amplifier Application
|
 NEC |
2SJ202
|
406Kb/6P |
P-CHANNEL MOS FET FOR SWITCHING
|
 Renesas Technology Corp |
2SJ202
|
505Kb/7P |
MOS FIELD EFFECT TRANSISTOR
2006 |
 NEC |
2SJ203
|
241Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
 Guangdong Kexin Industr... |
2SJ203
|
42Kb/1P |
MOS Fied Effect Transistor
|
 Renesas Technology Corp |
2SJ203
|
405Kb/7P |
MOS FIELD EFFECT TRANSISTOR
1990 |
 Guangdong Kexin Industr... |
2SJ203-3
|
1Mb/3P |
P-Channel MOSFET
|
 VBsemi Electronics Co.,... |
2SJ203-T1B-A
|
980Kb/7P |
P-Channel 60 V (D-S) MOSFET
|
|
2SJ203-T2B-A
|
981Kb/7P |
P-Channel 60 V (D-S) MOSFET
|
 Guangdong Kexin Industr... |
2SJ203
|
1Mb/3P |
P-Channel MOSFET
|
 NEC |
2SJ204
|
323Kb/6P |
P-CHANNEL MOS FET FOR SWITCHING
|