| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
2SJ201
|
182Kb/3P
|
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
|
2SJ201
|
448Kb/5P
|
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P
|
High-Power Amplifier Application
|
|
2SJ201
|
269Kb/5P
|
High-Power Amplifier Application
|
|
2SJ201
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
 Inchange Semiconductor ... |
2SJ201
|
503Kb/2P
|
isc P-Channel MOSFET Transistor
|
 Toshiba Semiconductor |
2SJ201-Y
|
269Kb/5P
|
High-Power Amplifier Application
|
|
2SJ201
|
448Kb/5P
|
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P
|
High-Power Amplifier Application
|
| Search Partnumber :
Start with "2SJ201" -
Total : 28 ( 1/2 Page) |
 Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 Inchange Semiconductor ... |
2SJ200
|
313Kb/2P |
isc P-Channel MOSFET Transistor
|
 Toshiba Semiconductor |
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ201-Y
|
269Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P |
High-Power Amplifier Application
|
 NEC |
2SJ202
|
406Kb/6P |
P-CHANNEL MOS FET FOR SWITCHING
|