2N7002T Datasheet, PDF - Datasheet Search Engine

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2N7002T Datasheet, PDF

Search Partnumber : Match&Start with "2N7002T" - Total : 61 ( 1/4 Page)

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	2N7002T	85Kb/3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30301 Rev. 2 - 2
Diodes Incorporated	2N7002T	447Kb/4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30301 Rev. 8 - 2
ON Semiconductor	2N7002T	417Kb/8P	N-Channel Enhancement Mode Field Effect Transistor January 2015 Rev. 1.1
Diodes Incorporated	2N7002T	89Kb/4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Rev. 11 - 2 March 2009
TRANSYS Electronics Lim...	2N7002T	156Kb/2P	Plastic-Encapsulated Transistors
Fairchild Semiconductor	2N7002T	333Kb/6P	N-Channel Enhancement Mode Field Effect Transistor
SeCoS Halbleitertechnol...	2N7002T	121Kb/3P	Small Signal MOSFET
Weitron Technology	2N7002T	292Kb/4P	N-Channel ENHANCEMENT MODE POWER MOSFET
Unisonic Technologies	2N7002T	148Kb/3P	300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
SeCoS Halbleitertechnol...	2N7002T	337Kb/3P	N-Channel Enhancement MOSFET
Micro Commercial Compon...	2N7002T	145Kb/4P	N-Channel Plastic-Encapsulate Transistor
Unisonic Technologies	2N7002T	162Kb/3P	300mA, 60V N-CHANNEL POWER MOSFET
WILLAS ELECTRONIC CORP	2N7002T	359Kb/2P	SOT-523 Plastic-Encapsulate MOSFETS
Nanjing International G...	2N7002T	2Mb/5P	SOT-523 Plastic-Encapsulate MOSFETS
VBsemi Electronics Co.,...	2N7002T	1,003Kb/8P	N-Channel 60-V (D-S) MOSFET
Tiger Electronic Co.,Lt...	2N7002T	1Mb/5P	SOT-523 Plastic-Encapsulate MOSFETS
SEC Electronics Inc.	2N7002T	191Kb/3P	N-Channel Plastic- Encapsulate MOSFETS
Jiangsu High diode Semi...	2N7002T	3Mb/5P	SOT-523 Plastic-Encaps u late MOSFET
Jiangsu Changjiang Elec...	2N7002T	2Mb/5P	MOSFET (N-Channel)
Shanghai Leiditech Elec...	2N7002T	1Mb/3P	Voltage controlled small signal switch

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Brief Description of 2N7002T

The 2N7002T is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are widely used in electronic circuits for their ability to control and amplify electronic signals. The 2N7002T is designed for low-power applications and is commonly used for switching and amplification purposes.

Here are some key specifications of the 2N7002T MOSFET:

Transistor Type: N-channel MOSFET
Maximum Drain-Source Voltage (Vds): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum Continuous Drain Current (Id): 115mA
Maximum Power Dissipation (Pd): 360mW
Threshold Voltage (Vth): Typically around 1.5V
On-Resistance (Rds(on)): Typically around 5Ω at Vgs = 4.5V

The 2N7002T MOSFET is commonly used for low-voltage switching applications. It offers a low threshold voltage, which means it can be easily controlled by low-voltage signals. The on-resistance is relatively low, allowing for efficient switching operations.

Equivalent for 2N7002T

The 2N7002T is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for low-power switching applications. While an exact replacement with the same part number may not be readily available, there are alternative options that can be considered. Here are a few potential replacements for the 2N7002T MOSFET:

IRF5305: The IRF5305 is an N-channel MOSFET with a maximum drain current of 31A and a maximum drain-source voltage of 55V. It has similar electrical characteristics to the 2N7002T and can be used as a replacement in many low-power switching applications.

BS170: The BS170 is another N-channel MOSFET with a maximum drain current of 0.5A and a maximum drain-source voltage of 60V. It is commonly used in low-power switching circuits and can be used as a replacement for the 2N7002T in certain applications.

BSS138: The BSS138 is an N-channel MOSFET with a maximum drain current of 0.17A and a maximum drain-source voltage of 50V. It is often used in low-power switching applications and can be considered as a replacement for the 2N7002T in suitable circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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