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Shortcut   2N7002T(65) recommended result.
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Included  *2N7002T*(3)
Manufacturer


2N7002T Datasheet, PDF

Search Partnumber : Match&Start with "2N7002T" - Total : 61 ( 1/4 Page)
ManufacturerPart #DatasheetDescription
logo
Diodes Incorporated
2N7002T DIODES-2N7002T Datasheet
85Kb/3P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30301 Rev. 2 - 2
2N7002T DIODES-2N7002T Datasheet
447Kb/4P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30301 Rev. 8 - 2
logo
ON Semiconductor
2N7002T ONSEMI-2N7002T Datasheet
417Kb/8P
N-Channel Enhancement Mode Field Effect Transistor
January 2015 Rev. 1.1
logo
Diodes Incorporated
2N7002T DIODES-2N7002T Datasheet
89Kb/4P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev. 11 - 2 March 2009
logo
TRANSYS Electronics Lim...
2N7002T TEL-2N7002T Datasheet
156Kb/2P
Plastic-Encapsulated Transistors
logo
Fairchild Semiconductor
2N7002T FAIRCHILD-2N7002T Datasheet
333Kb/6P
N-Channel Enhancement Mode Field Effect Transistor
logo
SeCoS Halbleitertechnol...
2N7002T SECOS-2N7002T Datasheet
121Kb/3P
Small Signal MOSFET
logo
Weitron Technology
2N7002T WEITRON-2N7002T Datasheet
292Kb/4P
N-Channel ENHANCEMENT MODE POWER MOSFET
logo
Unisonic Technologies
2N7002T UTC-2N7002T Datasheet
148Kb/3P
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
logo
SeCoS Halbleitertechnol...
2N7002T SECOS-2N7002T Datasheet
337Kb/3P
N-Channel Enhancement MOSFET
logo
Micro Commercial Compon...
2N7002T MCC-2N7002T Datasheet
145Kb/4P
N-Channel Plastic-Encapsulate Transistor
logo
Unisonic Technologies
2N7002T UTC-2N7002T Datasheet
162Kb/3P
300mA, 60V N-CHANNEL POWER MOSFET
logo
WILLAS ELECTRONIC CORP
2N7002T WILLAS-2N7002T Datasheet
359Kb/2P
SOT-523 Plastic-Encapsulate MOSFETS
logo
Nanjing International G...
2N7002T DGNJDZ-2N7002T Datasheet
2Mb/5P
SOT-523 Plastic-Encapsulate MOSFETS
logo
VBsemi Electronics Co.,...
2N7002T VBSEMI-2N7002T Datasheet
1,003Kb/8P
N-Channel 60-V (D-S) MOSFET
logo
Tiger Electronic Co.,Lt...
2N7002T TGS-2N7002T Datasheet
1Mb/5P
SOT-523 Plastic-Encapsulate MOSFETS
logo
SEC Electronics Inc.
2N7002T SECELECTRONICS-2N7002T Datasheet
191Kb/3P
N-Channel Plastic- Encapsulate MOSFETS
logo
Jiangsu High diode Semi...
2N7002T HDSEMI-2N7002T Datasheet
3Mb/5P
SOT-523 Plastic-Encaps u late MOSFET
logo
Jiangsu Changjiang Elec...
2N7002T JIANGSU-2N7002T Datasheet
2Mb/5P
MOSFET (N-Channel)
logo
Shanghai Leiditech Elec...
2N7002T LEIDITECH-2N7002T Datasheet
1Mb/3P
Voltage controlled small signal switch

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2N7002T Datasheet, PDF [Distributor]

DistributorPart # Manufacturer
Datasheet
DescriptionBuy Now
logo
Element14
2N7002T

part
MULTICOMP PRO

MOSFET, N-CH, 60V, 0.115A, SOT-523-3;
2N7002T

part
MULTICOMP PRO

MOSFET, N-CH, 60V, 0.115A, SOT-523-3;

2N7002T Distributor

DistributorPart #ManufacturerDescriptionPriceQty.
BuyNow



Brief Description of 2N7002T


The 2N7002T is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are widely used in electronic circuits for their ability to control and amplify electronic signals. The 2N7002T is designed for low-power applications and is commonly used for switching and amplification purposes.

Here are some key specifications of the 2N7002T MOSFET:

Transistor Type: N-channel MOSFET
Maximum Drain-Source Voltage (Vds): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum Continuous Drain Current (Id): 115mA
Maximum Power Dissipation (Pd): 360mW
Threshold Voltage (Vth): Typically around 1.5V
On-Resistance (Rds(on)): Typically around 5Ω at Vgs = 4.5V

The 2N7002T MOSFET is commonly used for low-voltage switching applications. It offers a low threshold voltage, which means it can be easily controlled by low-voltage signals. The on-resistance is relatively low, allowing for efficient switching operations.

Equivalent for 2N7002T


The 2N7002T is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for low-power switching applications. While an exact replacement with the same part number may not be readily available, there are alternative options that can be considered. Here are a few potential replacements for the 2N7002T MOSFET:

IRF5305: The IRF5305 is an N-channel MOSFET with a maximum drain current of 31A and a maximum drain-source voltage of 55V. It has similar electrical characteristics to the 2N7002T and can be used as a replacement in many low-power switching applications.

BS170: The BS170 is another N-channel MOSFET with a maximum drain current of 0.5A and a maximum drain-source voltage of 60V. It is commonly used in low-power switching circuits and can be used as a replacement for the 2N7002T in certain applications.

BSS138: The BSS138 is an N-channel MOSFET with a maximum drain current of 0.17A and a maximum drain-source voltage of 50V. It is often used in low-power switching applications and can be considered as a replacement for the 2N7002T in suitable circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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