| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
2SJ412
|
291Kb/5P
|
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
|
2SJ412
|
196Kb/6P
|
DC-DC Converter, Relay Drive and Motor Drive Applications
|
|
2SJ412
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
|
2SJ412
|
196Kb/6P
|
DC-DC Converter, Relay Drive and Motor Drive Applications
|
| Search Partnumber :
Start with "2SJ412" -
Total : 100 ( 1/5 Page) |
 Hitachi Semiconductor |
2SJ410
|
29Kb/6P |
Silicon P-Channel MOS FET
|
 Renesas Technology Corp |
2SJ410
|
1Mb/5P |
Silicon P Channel MOS FET
|
 Inchange Semiconductor ... |
2SJ410
|
296Kb/2P |
isc P-Channel MOSFET Transistor
|
 Renesas Technology Corp |
2SJ410-E
|
1Mb/5P |
Silicon P Channel MOS FET
|
 NEC |
2SJ411
|
70Kb/6P |
P-CHANNEL SIGNAL MOS FET FOR SWITCHING
|
 Renesas Technology Corp |
2SJ411
|
216Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
 Toshiba Semiconductor |
2SJ412
|
196Kb/6P |
DC-DC Converter, Relay Drive and Motor Drive Applications
|
 Sanyo Semicon Device |
2SJ413
|
79Kb/4P |
Ultrahigh-Speed Switching Applications
|
|
2SJ414
|
167Kb/3P |
General-Purpose Switching Device Applications
|
|
2SJ415
|
187Kb/3P |
General-Purpose Switching Device Applications
|
|
2SJ416
|
90Kb/3P |
Ultrahigh-Speed Switching Applications
|
|
2SJ417
|
89Kb/3P |
Ultrahigh-Speed Switching Applications
|
|
2SJ418
|
127Kb/4P |
Ultrahigh-Speed Switching Applications
|
|
2SJ419
|
89Kb/3P |
Ultrahigh-Speed Switching Applications
|
|
2SJ400
|
43Kb/4P |
Ultrahigh-Speed Switching Applications
|
 Toshiba Semiconductor |
2SJ401
|
286Kb/5P |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|