Description
The NCE01P35K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in a wide variety of applications.

General Features
● VDS =-100V,ID =-35A
RDS(ON) <40mΩ @ VGS=-10V (Typ:30mΩ)
RDS(ON) <45mΩ @ VGS=-4.5V (Typ:32mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance

Application
● Portable equipment and battery powered systems