DESCRIPTION
This product is Dual N-channel MOS Field Effect
Transistor designed for Li-ion battery applications
and power management applications of notebook computers.

FEATURES
· Dual chip type
· Low on-resistance
RDS(on)1 = 32 mW MAX. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 53 mW MAX. (VGS = 4 V, ID = 3.5 A)
· Low input capacitance Ciss = 780 pF TYP.
· Built-in G-S protection diode
· Small and surface mount package (Power SOP8)