| Manufacturer | Part # | Datasheet | Description |
 Vishay Siliconix |
VB10150S
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
19-May-08 |
|
VB10150S
|
156Kb/5P |
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
13-Aug-13 |
|
VB10150S-E3
|
167Kb/6P |
High efficiency operation
13-Dec-16 |
 Inchange Semiconductor ... |
VB10150S-E3
|
319Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB10150S-E3/4W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
19-May-08 |
|
VB10150S-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150S-E3/8W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
19-May-08 |
|
VB10150S-E3/8W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150S-M3
|
86Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5.0 A
30-Aug-13 |
|
VB10150S-M3
|
102Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5.0 A
19-Jun-2018 |
 Inchange Semiconductor ... |
VB10150S-M3
|
319Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB10150S-M3
|
77Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
30-Aug-13 |
|
VB10150S-M3
|
102Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5.0 A
19-Jun-2018 |