| Manufacturer | Part # | Datasheet | Description |
 Renesas Technology Corp |
UPA2810T1L-E1-AY
|
359Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
|
UPA2810T1L-E2-AY
|
359Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
|
UPA2811T1L
|
227Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
UPA2811T1L-E1-AY
|
227Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
UPA2811T1L-E2-AY
|
227Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
UPA2812T1L
|
173Kb/7P |
P-channel MOSFEF ??0 V, ??0 A, 4.8 m廓
|
|
UPA2813T1L
|
192Kb/7P |
P-channel MOSFET ??0 V, ??7 A, 6.2 m廓
|
|
UPA2814T1S
|
167Kb/7P |
P-channel MOSFET ??0 V, ??4 A, 7.8 m廓
|
|
UPA2815T1S
|
189Kb/7P |
P-channel MOSFET-30 V, ??1 A, 11 m
|
|
UPA2816T1S
|
148Kb/7P |
P-channel MOSFET ??0 V, ??7 A, 15.5 m廓
|
|
UPA2800
|
359Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
 VBsemi Electronics Co.,... |
UPA2800T1L
|
1Mb/7P |
N-Channel 30 V (D-S) MOSFET
|
 Renesas Technology Corp |
UPA2800T1L-E1-AY
|
359Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
|
UPA2800T1L-E2-AY
|
359Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
|
UPA2801
|
358Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
 VBsemi Electronics Co.,... |
UPA2801T1L
|
1Mb/7P |
N-Channel 30 V (D-S) MOSFET
|
 Renesas Technology Corp |
UPA2801T1L-E1-AY
|
358Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
|
UPA2801T1L-E2-AY
|
358Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2008 |
|
UPA2802
|
375Kb/9P |
MOS FIELD EFFECT TRANSISTOR
2008 |
|
UPA2802T1L-E1-AY
|
375Kb/9P |
MOS FIELD EFFECT TRANSISTOR
2008 |