| Manufacturer | Part # | Datasheet | Description |
 Analog Microelectronics |
TO-263-2
|
34Kb/1P |
Carrier Width (W) 24.0+-0.1 mm Pitch (P) 4.0+-0.1 mm
|
|
TO-263-2
|
60Kb/1P |
(D2 PAK) A : MIN 9.65 MAX 10.42 B : MIN 8.28 MAX 9.66
|
 AiT Semiconductor Inc. |
TO-263-2
|
1Mb/19P |
100V, N-CHANNEL SGT MOSFET
REV1.1 |
 ZP Semiconductor |
TO-263-2L
|
539Kb/2P |
Plastic-Encapsulate MOSFETS
|
|
TO-263-2L
|
531Kb/2P |
Plastic-Encapsulate MOSFETS
|
|
TO-263-2L
|
624Kb/2P |
Plastic-Encapsulate MOSFETS
|
|
TO-263-2L
|
358Kb/2P |
Plastic-Encapsulate MOSFETS
|
 Advanced Monolithic Sys... |
TO-263-2L
|
67Kb/5P |
Packaging for Automatic Handling
|
 Analog Microelectronics |
TO-263-3
|
34Kb/1P |
Carrier Width (W) 24.0+-0.1 mm Pitch (P) 4.0+-0.1 mm
|
|
TO-263-3
|
60Kb/1P |
(D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66
|
 Advanced Monolithic Sys... |
TO-263-3L
|
67Kb/5P |
Packaging for Automatic Handling
|
|
TO-263-5L
|
67Kb/5P |
Packaging for Automatic Handling
|
 Vishay Siliconix |
TO-263AB
|
162Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
25-Jun-09 |
|
TO-263AB
|
147Kb/5P |
Dual Common-Cathode Ultrafast Plastic Rectifier
07-Nov-07 |
|
TO-263AB
|
240Kb/9P |
Packaging Information
01-Feb-13 |
 Kersemi Electronic Co.,... |
TO-263AB
|
1Mb/3P |
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
|
|
TO-263AB
|
1Mb/3P |
Metal silicon junction, majority carrier conduction
|
|
TO-263AB
|
1Mb/3P |
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
|
|
TO-263AB
|
1Mb/3P |
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
|
|
TO-263AB
|
1Mb/3P |
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
|