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TIP122 Datasheet, PDF

Search Partnumber : Match&Start with "TIP122" - Total : 96 ( 1/5 Page)

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	TIP122	144Kb/7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 9
ON Semiconductor	TIP122	114Kb/7P	Plastic Medium-Power Complementary Silicon Transistors November, 2007 - Rev. 7
STMicroelectronics	TIP122	616Kb/13P	Complementary power Darlington transistors 25-Nov-2008
STMicroelectronics	TIP122	53Kb/4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Mar-2000
ON Semiconductor	TIP122	91Kb/7P	Plastic Medium-Power Complementary Silicon Transistors September, 2005 ??Rev. 6
KEC(Korea Electronics)	TIP122	224Kb/2P	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER)
Fairchild Semiconductor	TIP122	45Kb/4P	Medium Power Linear Switching Applications
Unisonic Technologies	TIP122	112Kb/3P	NPN EPITAXIAL TRANSISTOR
Boca Semiconductor Corp...	TIP122	28Kb/2P	Power Darlingtons for Linear and Switching Applications
Diotec Semiconductor	TIP122	110Kb/2P	Si-Epitaxial Planar Darlington Power Transistors
TRANSYS Electronics Lim...	TIP122	80Kb/3P	PLASTIC POWER TRANSISTORS
TRANSYS Electronics Lim...	TIP122	57Kb/1P	Plastic-Encapsulated Transistors
Multicomp Pro	TIP122	1Mb/5P	Darlington Transistors 18/12/19 V1.0
TAITRON Components Inco...	TIP122	242Kb/4P	Darlington Power Transistors (NPN)
Savantic, Inc.	TIP122	127Kb/4P	Silicon NPN Darlington Power Transistors
Dc Components	TIP122	195Kb/1P	TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Rectron Semiconductor	TIP122	76Kb/3P	TO-220 - Power Transistors and Darlingtons
SemiHow Co.,Ltd.	TIP122	501Kb/5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
Micro Commercial Compon...	TIP122	359Kb/2P	NPN Silicon Transistors
Power Innovations Ltd	TIP122	157Kb/6P	NPN SILICON POWER DARLINGTONS

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Brief Description of TIP122

The TIP122 is a popular NPN Darlington transistor that is widely used in electronic circuits, particularly for high-current switching applications. It is part of the TIP series of transistors and is known for its ability to amplify current and control high-power loads. Here are some key features and specifications of the TIP122 transistor:

Polarity: NPN (Negative-Positive-Negative).

The TIP122 is an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically rated at 5A or higher.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state. The TIP122 is capable of handling relatively high current loads.
Maximum Collector-Emitter Voltage (Vceo): Typically rated at 100V or higher.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 1000 or higher.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
High Gain: The TIP122 features a Darlington pair configuration, which results in very high gain and excellent current amplification.

Package: The TIP122 is typically available in a TO-220 or TO-220AB package, which provides good thermal performance and facilitates mounting to heatsinks for cooling.

Applications: The TIP122 transistor is commonly used in high-current and high-power applications, such as motor control, relay drivers, power amplifiers, and other applications that require high-current switching.

Heat Dissipation: The TIP122 can generate heat during operation, so proper heat management, including heatsinking, may be necessary for high-power applications.

Equivalent for TIP122

The TIP122 is an NPN Darlington power transistor commonly used in switching and amplification applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current of 5A. Suitable replacements include:

TIP120:

An NPN Darlington transistor similar to the TIP122.
Maximum collector-emitter voltage: 60V.
Maximum collector current: 5A.
Suitable for lower voltage applications with similar current requirements.
TIP125:

PNP complement to the TIP122.
Can be used in push-pull configurations with TIP122.
Maximum collector-emitter voltage: 100V.
Maximum collector current: 5A.
BD679:

An NPN Darlington transistor with similar specifications.
Maximum collector-emitter voltage: 80V.
Maximum collector current: 4A.
Slightly lower voltage and current ratings but suitable for many applications.
MJE13007:

NPN transistor designed for high-voltage, high-current applications.
Maximum collector-emitter voltage: 400V.
Maximum collector current: 8A.
Requires adjustments for different pin configuration and characteristics.
IRFZ44N (MOSFET alternative):

N-channel MOSFET suitable for switching applications.
Maximum drain-source voltage: 55V.
Continuous drain current: 49A.
Requires logic-level gate drive in some cases and is more efficient for switching.
IRF540N (MOSFET alternative):

N-channel MOSFET offering higher efficiency for switching.
Maximum drain-source voltage: 100V.
Continuous drain current: 33A.
Suitable for higher power and lower heat dissipation applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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