| Manufacturer | Part # | Datasheet | Description |
STMicroelectronics |
STS20NHS3LL
|
305Kb/12P |
N-channel 30V - 0.0032ohm - 20A - SO-8 STripFET III Power MOSFET plus monolithic schottky
31-Jan-2007 |
|
STS20N3LLH6
|
548Kb/13P |
Low gate drive power losses
17-Mar-2010 |
Stanson Technology |
STS20T10
|
194Kb/3P |
Reliable High Temperature Operation
|
|
STS20T10T220RGB
|
194Kb/3P |
Reliable High Temperature Operation
|
List of Unclassifed Man... |
STS21
|
523Kb/12P |
Temperature Sensor IC
|
SamHop Microelectronics... |
STS2300
|
591Kb/7P |
N-Channel E nhancement Mode Field EffectTransistor
|
|
STS2300S
|
820Kb/8P |
N-Channel E nhancement Mode Field Effect Transistor
|
|
STS2301
|
593Kb/7P |
P-Channel E nhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
STS2301
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2301A
|
107Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS2301A
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2302A
|
109Kb/7P |
Super high dense cell design for low RDS(ON).
|
|
STS2302S
|
806Kb/8P |
N-Channel E nhancement Mode Field Effect Transistor
|
|
STS2305
|
110Kb/7P |
Super high dense cell design for low RDS(ON).
|
|
STS2305A
|
174Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS2305A
|
1Mb/9P |
P-Channel 20-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2306
|
646Kb/7P |
N-Channel E nhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
STS2306
|
1Mb/9P |
N-Channel 20 V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2306A
|
145Kb/7P |
S uper high dense cell design for low R DS (ON).
|
|
STS2306E
|
141Kb/7P |
S uper high dense cell design for low R DS (ON).
|
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