| Manufacturer | Part # | Datasheet | Description |
 STMicroelectronics |
STP65N045M9
|
228Kb/12P |
N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package
25-May-2022 |
|
STP65N150M9
|
225Kb/12P |
N-channel 650 V, 128 m typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
19-Jul-2022 |
|
STP65N150M9
|
233Kb/12P |
N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
22-Feb-2023 |
|
STP65N150M9
|
233Kb/12P |
N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
22-Feb-2023 |
 Stanson Technology |
STP6506
|
844Kb/6P |
Dual P Channel Enhancement Mode MOSFET
|
 SamHop Microelectronics... |
STP652F
|
126Kb/7P |
Super high dense cell design for extremely low RDS(ON).
|
|
STP656F
|
128Kb/7P |
Super high dense cell design for low RDS(ON).
|
 SHENZHEN DOINGTER SEMIC... |
STP656F
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Stanson Technology |
STP601
|
398Kb/7P |
P Channel Enhancement Mode MOSFET
|
|
STP601D
|
676Kb/7P |
P Channel Enhancement Mode MOSFET
|
 VBsemi Electronics Co.,... |
STP601D
|
971Kb/7P |
P-Channel 60 V (D-S) MOSFET
|
 Stanson Technology |
STP607D
|
1Mb/8P |
P Channel Enhancement Mode MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STP60L60
|
1Mb/3P |
N-Channel MOSFET uses advanced trench technology
|
 SamHop Microelectronics... |
STP60L60F
|
124Kb/7P |
Super high dense cell design for low RDS(ON).
|
 STMicroelectronics |
STP60N043DM9
|
227Kb/12P |
N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
06-Sep-2022 |
|
STP60N05-14
|
77Kb/5P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Mar-1996 |
 Inchange Semiconductor ... |
STP60N05-14
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
 STMicroelectronics |
STP60N06
|
347Kb/10P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
May-1993 |
|
STP60N06-14
|
77Kb/5P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Mar-1996 |
 Inchange Semiconductor ... |
STP60N06-14
|
318Kb/2P |
Isc N-Channel MOSFET Transistor
|