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SS8550 Datasheet, PDF

Search Partnumber : Match&Start with "SS8550" - Total : 80 ( 1/4 Page)

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	SS8550	41Kb/4P	2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
Weitron Technology	SS8550	106Kb/4P	Plastic-Encapsulate Transistors PNP Silicon
Shanghai Shunye Electro...	SS8550	908Kb/4P	TRANSISTOR (PNP) V2.22
Daya Electric Group Co....	SS8550	143Kb/2P	TO-92 Plastic-Encapsulate Transistors
SeCoS Halbleitertechnol...	SS8550	335Kb/2P	PNP Silicon General Purpose Transistor
TECH PUBLIC Electronics...	SS8550	2Mb/4P	PLASTIC-ENCAPSULATE TRANSISTORS
Tiger Electronic Co.,Lt...	SS8550	576Kb/2P	TO-92 Plastic-Encapsulate Transistors (PNP)
MAKO SEMICONDUCTOR CO.,...	SS8550	87Kb/2P	Complimentary to SS8050
Diode Semiconductor Kor...	SS8550	269Kb/4P	Silicon Epitaxial Planar Transistor
Goodwork Semiconductor ...	SS8550	349Kb/3P	Plastic-Encapsulate Transistors
Yea Shin Technology Co....	SS8550	372Kb/2P	Plastic-Encapsulate Transistors
Nanjing International G...	SS8550	1Mb/4P	SOT-323 Plastic-Encapsulate Transistors
Nanjing International G...	SS8550	1Mb/5P	TO-92 Plastic-Encapsulate Transistors
Rectron Semiconductor	SS8550	214Kb/3P	Small and medium-sized power amplifier, medium power drive and switching applications
Jinan Jing Heng Electro...	SS8550	1Mb/5P	PNP Plastic-Encapsulate Transistors
Dc Components	SS8550	718Kb/2P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
First Silicon Co., Ltd	SS8550	576Kb/6P	Plastic-Encapsulate Transistors
Shenzhen Luguang Electr...	SS8550	665Kb/3P	Silicon Epitaxial Planar Transistor
Microdiode Semiconducto...	SS8550	1Mb/2P	TRANSISTOR(PNP)
DONGGUAN YOU FENG WEI E...	SS8550	565Kb/3P	PNP Transistors

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Brief Description of SS8550

The SS8550 is a specific type of small signal PNP transistor commonly used for amplification and switching applications. Here are some key specifications of the SS8550 transistor:

Collector Current (Ic): The maximum collector current is typically around 1.5 amperes (A). This value indicates the maximum current that can flow through the collector terminal of the transistor when it is fully turned on.

Collector-Emitter Voltage (Vceo): The maximum voltage that can be applied between the collector and the emitter terminal when the base terminal is open-circuited. It is typically around 25 volts.

Power Dissipation (Pd): The maximum power that the transistor can handle without exceeding its specified temperature limits. For the SS8550, it is typically around 900 milliwatts (mW).

DC Current Gain (hfe): The DC current gain, or hfe, represents the amplification capability of the transistor. For the SS8550, it typically ranges from 120 to 320, depending on the specific conditions and biasing.

Transition Frequency (ft): The transition frequency indicates the maximum frequency at which the transistor can effectively amplify signals. For the SS8550, it typically ranges from 100 to 300 megahertz (MHz).

Equivalent for SS8550

The SS8550 is a PNP bipolar junction transistor (BJT) that is commonly used in low-power amplification and switching applications. Some possible replacements for the SS8550 include:

BC556: This is a PNP BJT with a maximum collector current of 100 mA and a maximum collector-emitter voltage of 65V. It has similar characteristics to the SS8550 and is widely available.

2N3906: This is another PNP BJT commonly used in low-power amplification and switching applications. It has a maximum collector current of 200 mA and a maximum collector-emitter voltage of 40V.

S9013: This is also a PNP BJT with a maximum collector current of 500 mA and a maximum collector-emitter voltage of 40V. It has similar characteristics to the SS8550 and is commonly used as a replacement.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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