| Manufacturer | Part # | Datasheet | Description |
 Vishay Siliconix |
SI4354DY
|
94Kb/6P |
N-Channel 30-V (D-S) MOSFET
09-Mar-09 |
 VBsemi Electronics Co.,... |
SI4354DY-T1-E3
|
1,006Kb/9P |
N-Channel 20V (D-S) MOSFET
|
 Silicon Laboratories |
SI4355
|
275Kb/34P |
EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER
|
|
Si4355-B1A-FM
|
275Kb/34P |
EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER
|
|
Si4355-C2A-GM
|
1Mb/39P |
EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ TRANSCEIVER, TRANSMITTER, AND RECEIVER
|
|
Si4356-B1A-FM
|
70Kb/1P |
This change is considered a minor change which does not affect form, fit, function, quality, or reliability.
|
|
Si4356-B1A-FMR
|
70Kb/1P |
This change is considered a minor change which does not affect form, fit, function, quality, or reliability.
|
|
SI4356-DK
|
1Mb/16P |
Receiver node is a switch configurable Si4356 demo board
|
 Vaishali Semiconductor |
SI4356ADY
|
143Kb/3P |
N-Channel 30-V (D-S) MOSFET
|
 Vishay Siliconix |
SI4356DY
|
67Kb/6P |
N-Channel 30-V MOSFET
14-Apr-03 |
 Silicon Laboratories |
SI4300
|
120Kb/2P |
Dual-Band Monolithic Power Amplifier System
|
 Vishay Siliconix |
SI4300DY
|
45Kb/5P |
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
26-May-03 |
 VBsemi Electronics Co.,... |
SI4300DY-T1-E3
|
963Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
 Vishay Siliconix |
SI4300DY-TI
|
45Kb/5P |
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
26-May-03 |
 Silicon Laboratories |
SI4300T
|
123Kb/2P |
Tri-Band Monolithic Power Amplifier System
|
 Vishay Siliconix |
SI4308DY
|
79Kb/8P |
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
23-Sep-02 |
|
SI4310BDY
|
116Kb/10P |
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
16-Aug-04 |
|
SI4310BDY
|
152Kb/10P |
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
16-Nov-09 |
|
SI4310BDY-E3
|
116Kb/10P |
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
16-Aug-04 |
|
SI4310BDY-T1-E3
|
116Kb/10P |
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
16-Aug-04 |