| Manufacturer | Part # | Datasheet | Description |
 RF Micro Devices |
SGA8343ZPCK1
|
1Mb/13P |
LOW NOISE, HIGH GAIN SiGe HBT
|
 Qorvo, Inc |
SGA8343ZPCK1
|
790Kb/12P |
Heterostructure Bipolar Transistor
|
 RF Micro Devices |
SGA8343ZPCK3
|
1Mb/13P |
LOW NOISE, HIGH GAIN SiGe HBT
|
 Qorvo, Inc |
SGA8343ZPCK3
|
790Kb/12P |
Heterostructure Bipolar Transistor
|
 RF Micro Devices |
SGA8343ZPCK4
|
1Mb/13P |
LOW NOISE, HIGH GAIN SiGe HBT
|
 Qorvo, Inc |
SGA8343ZPCK4
|
790Kb/12P |
Heterostructure Bipolar Transistor
|
 RF Micro Devices |
SGA8343ZSQ
|
1Mb/13P |
LOW NOISE, HIGH GAIN SiGe HBT
|
 Qorvo, Inc |
SGA8343ZSQ
|
790Kb/12P |
Heterostructure Bipolar Transistor
|
 RF Micro Devices |
SGA8343ZSR
|
1Mb/13P |
LOW NOISE, HIGH GAIN SiGe HBT
|
 Qorvo, Inc |
SGA8343ZSR
|
790Kb/12P |
Heterostructure Bipolar Transistor
|
 RF Micro Devices |
SGA8343Z
|
1Mb/13P |
LOW NOISE, HIGH GAIN SiGe HBT
|
 Qorvo, Inc |
SGA8343Z
|
790Kb/12P |
Heterostructure Bipolar Transistor
|
 SIRENZA MICRODEVICES |
SGA8343Z
|
96Kb/4P |
Low Noise, High Gain SiGe HBT
|
 RF Micro Devices |
SGA8543Z
|
188Kb/5P |
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
|
|
SGA8543Z-EVB1
|
188Kb/5P |
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
|
|
SGA8543Z-EVB2
|
188Kb/5P |
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
|
|
SGA8543ZSQ
|
188Kb/5P |
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
|
|
SGA8543ZSR
|
188Kb/5P |
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
|
 Stanford Microdevices |
SGA-0163
|
258Kb/5P |
DC-4500MHZ SILICON GERMANIUM CASCADEABLE GAIN BLOCK
|
 SIRENZA MICRODEVICES |
SGA-0163
|
249Kb/5P |
DC-4500 MHz, Silicon Germanium Cascadeable Gain Block
|