| Manufacturer | Part # | Datasheet | Description |
 NXP Semiconductors |
PDTD123TK
|
67Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
Rev. 02-21 July 2005 |
 Nexperia B.V. All right... |
PDTD123TK
|
243Kb/11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 03 - 16 November 2009 |
 NXP Semiconductors |
PDTD123TK
|
129Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
 Nexperia B.V. All right... |
PDTD123TT
|
243Kb/11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 03 - 16 November 2009 |
 NXP Semiconductors |
PDTD123TT
|
129Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
|
PDTD123TT
|
67Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
Rev. 02-21 July 2005 |
|
PDTD123T
|
129Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
 Nexperia B.V. All right... |
PDTD123T_SER
|
243Kb/11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 03 - 16 November 2009 |
 NXP Semiconductors |
PDTD123E
|
68Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-8 April 2005 |
|
PDTD123E
|
131Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
 Nexperia B.V. All right... |
PDTD123E
|
245Kb/11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009 |
 NXP Semiconductors |
PDTD123EK
|
948Kb/12P |
Low VCEsat (BISS) transistors
May 2006 |
|
PDTD123EK
|
68Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-8 April 2005 |
|
PDTD123EK
|
131Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
 Nexperia B.V. All right... |
PDTD123EK
|
245Kb/11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009 |
|
PDTD123EQA
|
3Mb/23P |
50 V, 500 mA PNP resistor-equipped transistors
Rev. 1 - 30 March 2016 |
|
PDTD123EQA
|
2Mb/24P |
50 V, 500 mA NPN resistor-equipped transistors
Rev. 1 - 4 February 2016 |
|
PDTD123EQA
|
2Mb/24P |
50 V, 500 mA NPN resistor-equipped transistors
|
|
PDTD123ES
|
245Kb/11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009 |
 NXP Semiconductors |
PDTD123ES
|
131Kb/10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |