PDTD123ES Datasheet, PDF

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PDTD123EK	68Kb/10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-8 April 2005
	PDTD123EK	948Kb/12P	Low VCEsat (BISS) transistors May 2006
	PDTD123EK	131Kb/10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 Rev. 02-16 November 2009
Nexperia B.V. All right...	PDTD123EK	245Kb/11P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 - 16 November 2009
	PDTD123EQA	2Mb/24P	50 V, 500 mA NPN resistor-equipped transistors
	PDTD123EQA	2Mb/24P	50 V, 500 mA NPN resistor-equipped transistors Rev. 1 - 4 February 2016
	PDTD123EQA	3Mb/23P	50 V, 500 mA PNP resistor-equipped transistors Rev. 1 - 30 March 2016
NXP Semiconductors	PDTD123ET	68Kb/10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-8 April 2005
	PDTD123ET	948Kb/12P	Low VCEsat (BISS) transistors May 2006
	PDTD123ET	131Kb/10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 Rev. 02-16 November 2009
Nexperia B.V. All right...	PDTD123ET	245Kb/11P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 - 16 November 2009
	PDTD123ET	202Kb/9P	50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 20 September 2024
	PDTD123ET-Q	202Kb/9P	50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 20 September 2024
	PDTD123EU	3Mb/27P	500 mA, 50 V NPN resistor-equipped transistors
	PDTD123EU	3Mb/27P	500 mA, 50 V NPN resistor-equipped transistors Rev. 1 - 13 May 2014
	PDTD123EU	3Mb/27P	500 mA, 50 V PNP resistor-equipped transistors Rev. 1 - 6 May 2014
NXP Semiconductors	PDTD123E	131Kb/10P	NPN 500 mA, 50 V resistor-equipped transistors Rev. 02-16 November 2009
Nexperia B.V. All right...	PDTD123E_SER	245Kb/11P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 - 16 November 2009
NXP Semiconductors	PDTD123E	68Kb/10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Rev. 01-8 April 2005
NXP Semiconductors	PDTD123E	131Kb/10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 Rev. 02-16 November 2009

PDTD123ES Datasheet, PDF

PDTD123ES Datasheet ,PDF

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