| Manufacturer | Part # | Datasheet | Description |
 Renesas Technology Corp |
NX6353EP
|
814Kb/7P |
LASER DIODE
Feb 25, 2013 |
 California Eastern Labs |
NX6353EP
|
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
 Renesas Technology Corp |
NX6353EP27
|
814Kb/7P |
LASER DIODE
Feb 25, 2013 |
 California Eastern Labs |
NX6353EP27-AZ
|
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
 Renesas Technology Corp |
NX6353EP29
|
814Kb/7P |
LASER DIODE
Feb 25, 2013 |
 California Eastern Labs |
NX6353EP29-AZ
|
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
 Renesas Technology Corp |
NX6353EP31
|
814Kb/7P |
LASER DIODE
Feb 25, 2013 |
 California Eastern Labs |
NX6353EP31-AZ
|
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
 Renesas Technology Corp |
NX6353EP33
|
814Kb/7P |
LASER DIODE
Feb 25, 2013 |
 California Eastern Labs |
NX6353EP33-AZ
|
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
 Renesas Technology Corp |
NX6353EP35
|
814Kb/7P |
LASER DIODE
Feb 25, 2013 |
 California Eastern Labs |
NX6353EP35-AZ
|
714Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
 Renesas Technology Corp |
NX6353EP
|
247Kb/7P |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|