| Manufacturer | Part # | Datasheet | Description |
 M/A-COM Technology Solu... |
NPT2010
|
2Mb/10P |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
|
NPT2010
|
2Mb/10P |
DC-2.2 GHz HEMT
|
|
NPT2018
|
927Kb/5P |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
|
 List of Unclassifed Man... |
NPT2018
|
927Kb/5P |
Industry Standard Plastic Package
|
 M/A-COM Technology Solu... |
NPT2018
|
12Mb/9P |
Next generation high power RF semiconductor technology
|
|
NPT2018
|
927Kb/5P |
DC-6 GHz HEMT
|
|
NPT2019
|
918Kb/5P |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
|
NPT2019
|
918Kb/5P |
DC-6 GHz HEMT
|
|
NPT2020
|
1Mb/8P |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
|
NPT2020
|
1Mb/13P |
GaN Wideband Transistor 48 V, 50 W
|
|
NPT2020-SMB2
|
1Mb/13P |
GaN Wideband Transistor 48 V, 50 W
|
|
NPT2020-SMBPPR
|
1Mb/13P |
GaN Wideband Transistor 48 V, 50 W
|
|
NPT2020
|
1Mb/13P |
GaN Wideband Transistor 48 V, 50 W
|
|
NPT2021
|
1Mb/9P |
Suitable for linear and saturated applications
|
|
NPT2021
|
12Mb/9P |
Next generation high power RF semiconductor technology
|
|
NPT2021-DC-2P2GHZ-50W
|
951Kb/4P |
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT
|
|
NPT2021-SMBPPR
|
1Mb/9P |
Suitable for linear and saturated applications
|
|
NPT2021
|
1Mb/9P |
Suitable for linear and saturated applications
|
|
NPT2022
|
2Mb/10P |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
|
NPT2022
|
1Mb/11P |
GaN Wideband Transistor 48 V, 100 W
|