| Manufacturer | Part # | Datasheet | Description |
ON Semiconductor |
NE55
|
170Kb/10P |
Internally Compensated Dual Low Noise Operational Amplifier
March, 2006 ??Rev. 1 |
Diodes Incorporated |
NE55
|
729Kb/14P |
PRECISION TIMERS
Rev 4 |
Renesas Technology Corp |
NE5500134
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
|
NE5500134-A
|
137Kb/2P |
RF & Microwave device
|
|
NE5500134-AZ
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
|
NE5500134-T1
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
|
NE5500134-T1-AZ
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
NEC |
NE5500179A
|
66Kb/11P |
SILICON POWER MOS FET
|
Renesas Technology Corp |
NE5500179A
|
298Kb/13P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5500179A
|
43Kb/5P |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
NEC |
NE5500179A-T1
|
66Kb/11P |
SILICON POWER MOS FET
|
Renesas Technology Corp |
NE5500179A-T1
|
298Kb/13P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5500179A-T1
|
43Kb/5P |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5500234
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
California Eastern Labs |
NE5500234
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
Renesas Technology Corp |
NE5500234-A
|
137Kb/2P |
RF & Microwave device
|
|
NE5500234-AZ
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
California Eastern Labs |
NE5500234-AZ
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
Renesas Technology Corp |
NE5500234-T1
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
California Eastern Labs |
NE5500234-T1
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
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