| Manufacturer | Part # | Datasheet | Description |
NEC |
NE32083A
|
247Kb/7P |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
|
|
NE32000
|
247Kb/7P |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
|
|
NE321000
|
48Kb/12P |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
California Eastern Labs |
NE321000
|
135Kb/6P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE321000
|
141Kb/6P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
Renesas Technology Corp |
NE321000
|
215Kb/14P |
HETERO JUNCTION FIELDEFFECT TRANSISTOR
1999 |
California Eastern Labs |
NE321000
|
135Kb/6P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
NEC |
NE3210S01
|
62Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3210S01
|
414Kb/7P |
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE3210S01
|
197Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
NEC |
NE3210S01-T1
|
62Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3210S01-T1
|
414Kb/7P |
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE3210S01-T1
|
197Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
NEC |
NE3210S01-T1B
|
62Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3210S01-T1B
|
414Kb/7P |
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE3210S01-T1B
|
197Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
NEC |
NE32400
|
85Kb/8P |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
|
NE32400
|
55Kb/5P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE32400
|
55Kb/5P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE32484A
|
63Kb/12P |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
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