| Manufacturer | Part # | Datasheet | Description |
MORE Semiconductor Comp... |
MSC4606W-SOP8
|
576Kb/9P |
N and P-Channel Enhancement Mode Power MOS FET
|
Advanced Power Technolo... |
MSC4000
|
190Kb/4P |
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
|
|
MSC4001
|
190Kb/4P |
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
|
|
MSC4003
|
189Kb/4P |
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
|
Microchip Technology |
MSC400SMA330B4
|
5Mb/15P |
3300 V, 400 mΩ SiC N-Channel Power MOSFET
Revision A Date 02/2022 |
Inchange Semiconductor ... |
MSC400SMA330B4
|
331Kb/3P |
SiC N-Channel MOSFET
|
MORE Semiconductor Comp... |
MSC4953W
|
570Kb/6P |
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
|
|
MSC4963W
|
623Kb/6P |
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
|
Bruckewell Technology L... |
MSC49N02X
|
504Kb/6P |
40V N-Channel MOSFETs
|
|
MSC49N60X
|
607Kb/6P |
40V N-Channel MOSFETs
|
PANDUIT CORP. |
MSC4W38T15-L2
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T15-L4
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T15-L6
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T15-Q2
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T15-Q4
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T15-Q6
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T30-L2
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T30-L4
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T30-L6
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
|
MSC4W38T30-Q2
|
352Kb/4P |
The Panduit Method Reduces Installation Time
|
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