| Manufacturer | Part # | Datasheet | Description |
 Freescale Semiconductor... |
MRFG35010
|
532Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
 NXP Semiconductors |
MRFG35010A
|
490Kb/18P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Rev. 2, 12/2008 |
|
MRFG35010AN
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 Freescale Semiconductor... |
MRFG35010ANT1
|
260Kb/12P |
Gallium Arsenide PHEMT
|
 NXP Semiconductors |
MRFG35010ANT1
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 Freescale Semiconductor... |
MRFG35010AR1
|
419Kb/20P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
 NXP Semiconductors |
MRFG35010AR1
|
490Kb/18P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Rev. 2, 12/2008 |
 Freescale Semiconductor... |
MRFG35010MT1
|
516Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
 Motorola, Inc |
MRFG35010MT1
|
300Kb/8P |
Gallium Arsenide PHEMT
|
 Freescale Semiconductor... |
MRFG35010N
|
190Kb/12P |
RF Power Field Effect Transistor
|
|
MRFG35010NT1
|
173Kb/10P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
|
MRFG35010R1
|
373Kb/11P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|