| Manufacturer | Part # | Datasheet | Description |
 Seoul Semiconductor |
MJD-2V16W1P3
|
546Kb/20P |
120V 17W Downlight
|
 Motorola, Inc |
MJD112
|
306Kb/6P |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
|
 ON Semiconductor |
MJD112
|
147Kb/8P |
Complementary Darlington Power Transistors
August, 2004 ??Rev. 5 |
 STMicroelectronics |
MJD112
|
84Kb/6P |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Sep-1997 |
 KEC(Korea Electronics) |
MJD112
|
394Kb/2P |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
 Fairchild Semiconductor |
MJD112
|
51Kb/5P |
D-PAK for Surface Mount Applications
|
 ON Semiconductor |
MJD112
|
101Kb/8P |
Complementary Darlington Power Transistors
January, 2006 ??Rev. 7 |
 Fairchild Semiconductor |
MJD112
|
153Kb/5P |
NPN Silicon Darlington Transistor
|
 STMicroelectronics |
MJD112
|
250Kb/6P |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Jan-2003 |
 Dc Components |
MJD112
|
244Kb/1P |
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
|
 STMicroelectronics |
MJD112
|
388Kb/10P |
Complementary power Darlington transistors
21-Jan-2010 |
 ON Semiconductor |
MJD112
|
144Kb/8P |
Complementary Darlington Power Transistors
March, 2011 ??Rev. 9 |
 Micro Commercial Compon... |
MJD112
|
382Kb/3P |
Silicon NPN epitaxial planer Transistors
|
 SHENZHEN YONGERJIA INDU... |
MJD112
|
109Kb/2P |
TO-251/TO-252-2 Plastic-Encapsulate Transistors
|
 ON Semiconductor |
MJD112
|
153Kb/10P |
Complementary Darlington Power Transistors
November, 2013 ??Rev. 13 |
 Continental Device Indi... |
MJD112
|
90Kb/6P |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
|
 Jiangsu Changjiang Elec... |
MJD112
|
1Mb/3P |
TRANSISTOR (NPN)
|
 Foshan Blue Rocket Elec... |
MJD112
|
821Kb/6P |
Silicon NPN transistor in a TO-252 Plastic Package.
|
 Micro Commercial Compon... |
MJD112
|
295Kb/3P |
Silicon NPN epitaxial planer Transistors
|
 First Silicon Co., Ltd |
MJD112
|
543Kb/4P |
TRANSISTOR (NPN)
|