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IRFZ46N Datasheet, PDF

Search Partnumber : Match&Start with "IRFZ46N" - Total : 23 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRFZ46N	85Kb/8P	Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
International Rectifier	IRFZ46N	190Kb/9P	HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)
Inchange Semiconductor ...	IRFZ46N	338Kb/2P	N-Channel MOSFET Transistor
SYC Electronica	IRFZ46N	150Kb/8P	Advanced Process Technology
List of Unclassifed Man...	IRFZ46N	2Mb/31P	SEMICONDUCTORS
International Rectifier	IRFZ46NL	263Kb/10P	HEXFET POWER MOSFET
	IRFZ46NL	262Kb/11P	Advanced Process Technology
	IRFZ46NLPBF	678Kb/10P	HEXFET Power MOSFET
	IRFZ46NPBF	190Kb/9P	HEXFET짰 Power MOSFET
	IRFZ46NPBF	221Kb/8P	ADVANCED PROCESS TECHNOLOGY
	IRFZ46NPBF	221Kb/8P	ADVANCED PROCESS TECHNOLOGY
	IRFZ46NS	263Kb/10P	HEXFET POWER MOSFET
	IRFZ46NS	262Kb/11P	Advanced Process Technology
Inchange Semiconductor ...	IRFZ46NS	244Kb/2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	IRFZ46NS	1Mb/8P	N-Channel 60-V (D-S) MOSFET
International Rectifier	IRFZ46NSLPBF	262Kb/11P	Advanced Process Technology
	IRFZ46NSPBF	678Kb/10P	HEXFET Power MOSFET
	IRFZ46NSPBF	687Kb/11P	ADVANCED PROCESS TECHNOLOGY
	IRFZ46NSPBF	687Kb/11P	ADVANCED PROCESS TECHNOLOGY
	IRFZ46NSTRL	263Kb/10P	HEXFET POWER MOSFET

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Brief Description of IRFZ46N

The IRFZ46N is a power MOSFET device commonly used in electronic applications requiring high-speed switching, low on-resistance, and efficient power handling capabilities. MOSFETs like the IRFZ46N are widely used in power supply, motor control, and various high-power switching applications.

Here are some key characteristics of the IRFZ46N:

Drain-to-Source Voltage (Vdss): The IRFZ46N typically has a drain-to-source voltage rating around 55V, making it suitable for many mid-voltage applications.

Continuous Drain Current (Id): This MOSFET can handle a significant amount of continuous current, typically in the range of 53A, which is beneficial for applications that require high current handling capability.

Power Dissipation (Pd): With a high power dissipation capability, it can handle applications that generate considerable heat during operation.

Rds(on): It has a low on-state resistance, usually less than 0.022 ohms. The low on-resistance helps reduce power losses and improves efficiency.

Gate Charge (Qg): The gate charge is a parameter that influences the speed of the MOSFET’s turn-on and turn-off. A lower gate charge typically leads to faster switching speeds.

The IRFZ46N is part of a family of MOSFETs that are designed for various switching applications, including those that require robustness and reliability in harsh environments. With its ability to handle high currents and power levels, it's a solid choice for demanding applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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