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IRFP460 Datasheet, PDF

Search Partnumber : Match&Start with "IRFP460" - Total : 49 ( 1/3 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	IRFP460	94Kb/7P	PowerMOS transistors Avalanche energy rated September 1999 Rev 1.000
STMicroelectronics	IRFP460	91Kb/8P	N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET Sep-1998
Vishay Siliconix	IRFP460	135Kb/8P	Power MOSFET 28-Jul-08
	IRFP460	169Kb/9P	Power MOSFET 28-Jul-08
	IRFP460	203Kb/11P	Power MOSFET 31-Jan-2022
Intersil Corporation	IRFP460	55Kb/7P	20A, 500V, 0.270 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFP460	163Kb/6P	Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
IXYS Corporation	IRFP460	77Kb/4P	MegaMOS - Power MOSFET
Inchange Semiconductor ...	IRFP460	67Kb/2P	isc N-Channel MOSFET Transistor
List of Unclassifed Man...	IRFP460	2Mb/31P	SEMICONDUCTORS
Vishay Siliconix	IRFP460A	212Kb/10P	Power MOSFET 31-Jan-2022
Vishay Siliconix	IRFP460A	144Kb/8P	Power MOSFET 28-Jul-08
Inchange Semiconductor ...	IRFP460A	369Kb/2P	isc N-Channel MOSFET Transistor
International Rectifier	IRFP460A	95Kb/8P	Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)
Vishay Siliconix	IRFP460APBF	212Kb/10P	Power MOSFET 31-Jan-2022
International Rectifier	IRFP460APBF	195Kb/9P	SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27廓 , ID=20A )
Inchange Semiconductor ...	IRFP460APBF	324Kb/2P	isc N-Channel MOSFET Transistor
International Rectifier	IRFP460AS	115Kb/8P	Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)
Vishay Siliconix	IRFP460A	212Kb/10P	Power MOSFET 31-Jan-2022
Vishay Siliconix	IRFP460B	186Kb/8P	D Series Power MOSFET 16-Apr-12

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Brief Description of IRFP460

The IRFP460 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in high-power switching applications, such as in power supplies, motor control, and amplifiers. MOSFETs are voltage-controlled devices known for their fast switching speeds and high efficiency. Here are some key features and specifications of the IRFP460 MOSFET:

Type: The IRFP460 is an N-channel power MOSFET, indicating that it uses an N-type semiconductor material for the channel.

Voltage Rating: It typically has a high drain-source voltage (Vds) rating, often in the range of 500 to 600 volts, indicating the maximum voltage the device can handle in its off state.

Current Rating: The IRFP460 has a relatively high continuous drain current (Id) rating, often in the range of 20 to 24 amperes. This represents the maximum continuous current that can flow through the device.

Power Dissipation: The power dissipation (Pd) rating is the maximum amount of power that the MOSFET can handle without exceeding its maximum junction temperature. It is often specified in watts.

Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is the voltage at which the MOSFET starts to conduct. It is an important parameter for proper gate drive design.

On-State Resistance: The on-state resistance (Rds(on)) is a crucial parameter that determines the resistance between the drain and source when the MOSFET is in its on state. Lower Rds(on) values indicate better conductivity and reduced power losses.

Gate-Source Voltage: The maximum gate-source voltage (Vgs) is the maximum voltage that can be applied between the gate and source terminals without damaging the MOSFET.

Package Type: The IRFP460 is commonly available in a TO-247 package, which provides good thermal performance and ease of mounting to heatsinks.

Applications: Power MOSFETs like the IRFP460 are used in high-power applications where efficient switching and low power dissipation are essential. Common applications include power inverters, audio amplifiers, motor control, and power supplies.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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