| Manufacturer | Part # | Datasheet | Description |
 Samsung semiconductor |
IRF9230
|
508Kb/12P |
P-CHANNEL POWER MOSFETS
|
 Seme LAB |
IRF9230
|
22Kb/2P |
P-CHANNEL POWER MOSFET
|
 Intersil Corporation |
IRF9230
|
72Kb/7P |
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
January 1998 |
 International Rectifier |
IRF9230
|
149Kb/7P |
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
|
 New Jersey Semi-Conduct... |
IRF9230
|
115Kb/2P |
Avalanche-Energy-Rated P-Channel Power MOSFETs
|
 Samsung semiconductor |
IRF9231
|
508Kb/12P |
P-CHANNEL POWER MOSFETS
|
 Intersil Corporation |
IRF9231
|
72Kb/7P |
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
January 1998 |
 Samsung semiconductor |
IRF9233
|
508Kb/12P |
P-CHANNEL POWER MOSFETS
|
 Intersil Corporation |
IRF9233
|
72Kb/7P |
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
January 1998 |
 International Rectifier |
IRF9204PBF
|
240Kb/7P |
Advanced Process Technology, Ultra Low On-Resistance
|
 Samsung semiconductor |
IRF9240
|
508Kb/12P |
P-CHANNEL POWER MOSFETS
|
 Seme LAB |
IRF9240
|
25Kb/2P |
P-CHANNEL POWER MOSFET
|
 Intersil Corporation |
IRF9240
|
63Kb/7P |
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
February 1999 |
 International Rectifier |
IRF9240
|
147Kb/7P |
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)
|
 Seme LAB |
IRF9240
|
29Kb/2P |
P?밅HANNEL POWER MOSFET
|
 New Jersey Semi-Conduct... |
IRF9240
|
158Kb/4P |
P-CHANNEL POWER MOSFETS
|
|
IRF9240
|
158Kb/4P |
P-CHANNEL POWER MOSFETS
|
|
IRF9240
|
685Kb/2P |
200V, P-CHANNEL
|
 International Rectifier |
IRF9240
|
150Kb/7P |
Simple Drive Requirements
|
 Inchange Semiconductor ... |
IRF9240
|
387Kb/2P |
isc P-Channel MOSFET Transistor
|