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IRF740 Datasheet, PDF

Search Partnumber : Match&Start with "IRF740" - Total : 135 ( 1/7 Page)

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	IRF740	93Kb/8P	N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET Oct-1998
Vishay Siliconix	IRF740	135Kb/8P	Power MOSFET 16-Jun-08
	IRF740	276Kb/9P	Power MOSFET 21-Mar-11
	IRF740	157Kb/8P	Power MOSFET 16-Aug-2021
Fairchild Semiconductor	IRF740	154Kb/5P	N-Channel Power MOSFETs, 10A, 350V/400V
Fairchild Semiconductor	IRF740	894Kb/10P	400V N-Channel MOSFET
Intersil Corporation	IRF740	56Kb/7P	10A, 400V, 0.550 Ohm, N-Channel Power MOSFET July 1999
Suntac Electronic Corp.	IRF740	100Kb/3P	POWER MOSFET
Dc Components	IRF740	209Kb/2P	TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
Nell Semiconductor Co.,...	IRF740	342Kb/7P	N-Channel Power MOSFET
New Jersey Semi-Conduct...	IRF740	71Kb/2P	N-Channel MOSFET Transistor
First Components Intern...	IRF740	444Kb/3P	10A 400V N CHANNEL POWER MOSFET
ARTSCHIP ELECTRONICS CO...	IRF740	345Kb/5P	N-Channel Power MOSFETs
Inchange Semiconductor ...	IRF740	279Kb/2P	isc N-Channel MOSFET Transistor
SYC Electronica	IRF740	234Kb/7P	N - CHANNEL 400V - 0.48 W - 10 A - TO-220 PowerMESHÔ MOSFET
List of Unclassifed Man...	IRF740	2Mb/31P	SEMICONDUCTORS
Analog Devices	IRF7401	279Kb/22P	Thermoelectric Cooler Controller REV. D
Analog Devices	IRF7401	416Kb/24P	Thermoelectric Cooler Controller 11/03-Data Sheet Changed from REV. B to REV. C.
International Rectifier	IRF7401	118Kb/9P	Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
EVER SEMICONDUCTOR CO.,...	IRF7401	402Kb/8P	N-Channel MOSFET Rev:2023A2

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Brief Description of IRF740

The IRF740 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for high-power switching and amplification applications. It is part of the IRF series of power MOSFETs and is known for its ability to handle high currents and voltages. Here are some key features and specifications of the IRF740 MOSFET:

Polarity: N-Channel.

The IRF740 is an N-channel MOSFET, which means it uses electron flow to control electrical current.
Drain-Source Voltage (Vds): Typically rated at 400V.

The maximum voltage that can be applied between the drain and source terminals when the MOSFET is in the off state.
Continuous Drain Current (Id): Typically rated at 10A.

The maximum current the MOSFET can handle continuously in the on state.
On-Resistance (Rds(on): Typically low, often in the range of milliohms.

The resistance between the drain and source terminals when the MOSFET is fully turned on.
Gate Threshold Voltage (Vgs(th)): Typically around 2V to 4V.

The voltage required to turn the MOSFET on.
Gate-Source Voltage (Vgs): Usually rated up to ±20V.

The maximum voltage that can be applied between the gate and source terminals.
Package: The IRF740 is typically available in TO-220 or TO-220AB packages, which provide good thermal performance and ease of mounting to heatsinks for cooling.

Applications: The IRF740 MOSFET is commonly used in high-power applications, such as switching power supplies, motor control circuits, amplifier output stages, and other applications that require high-current switching.

Heat Dissipation: The IRF740 can generate heat during operation, so adequate thermal management, including heatsinking, may be necessary for high-power applications.

Avalanche Energy Rating: The IRF740 has an avalanche energy rating, which specifies the amount of energy the MOSFET can safely absorb during transient voltage spikes.

Equivalent for IRF740

The IRF740 is an N-channel power MOSFET designed for high-speed switching applications, featuring a maximum drain-source voltage of 400V and a continuous drain current of 10A. Several MOSFETs offer similar characteristics and can serve as replacements:

IRF740A:

Maximum drain-source voltage: 400V
Continuous drain current: 10A
Total gate charge: 36 nC
Package: TO-220AB
IRF740LC:

Maximum drain-source voltage: 400V
Continuous drain current: 10A
Low capacitance for improved switching performance
Package: TO-220AB
IRFB13N50A:

Maximum drain-source voltage: 500V
Continuous drain current: 13A
Total gate charge: 94 nC
Package: TO-220AB
IRFB17N50L:

Maximum drain-source voltage: 500V
Continuous drain current: 17A
Low on-resistance for efficient switching
Package: TO-220AB
When selecting a replacement, consider the following factors:

Voltage and Current Ratings: Ensure the substitute MOSFET can handle the required voltage and current levels in your circuit.
On-Resistance (R_DS(on)): Lower on-resistance results in higher efficiency and reduced heat generation.
Gate Charge: A lower total gate charge can lead to faster switching times and reduced power loss.
Package Type and Pin Configuration: Confirm that the physical package and pinout are compatible with your circuit layout.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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