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IRF730 Datasheet, PDF

Search Partnumber : Match&Start with "IRF730" - Total : 147 ( 1/8 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	IRF730	59Kb/7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
STMicroelectronics	IRF730	94Kb/8P	N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET Aug-1998
Vishay Siliconix	IRF730	134Kb/8P	Power MOSFET 16-Jun-08
	IRF730	277Kb/9P	Power MOSFET 21-Mar-11
	IRF730	156Kb/8P	Power MOSFET 16-Aug-2021
Fairchild Semiconductor	IRF730	177Kb/6P	N-Channel Power MOSFETs, 5.5A, 350 V/400V
Fairchild Semiconductor	IRF730	898Kb/10P	400V N-Channel MOSFET
Intersil Corporation	IRF730	54Kb/7P	5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRF730	102Kb/8P	SMPS MOSFET
Suntac Electronic Corp.	IRF730	79Kb/3P	POWER MOSFET
Advanced Power Electron...	IRF730	95Kb/4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Dc Components	IRF730	206Kb/2P	TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
Inchange Semiconductor ...	IRF730	128Kb/1P	N-channel mosfet transistor
Nell Semiconductor Co.,...	IRF730	341Kb/7P	N-Channel Power MOSFET
New Jersey Semi-Conduct...	IRF730	848Kb/3P	N-Channel Power MOSFETs, 5.5 A, 350 V/400 V
First Components Intern...	IRF730	100Kb/3P	6.0A 400V N CHANNEL POWER MOSFET
International Rectifier	IRF730	355Kb/16P	High Power Factor/Low THD
First Silicon Co., Ltd	IRF730	365Kb/6P	6.0A, 400V, 1.0廓 N-CHANNEL POWER MOSFET
List of Unclassifed Man...	IRF730	2Mb/31P	SEMICONDUCTORS
International Rectifier	IRF7301	113Kb/9P	Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)

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Brief Description of IRF730

The IRF730 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is produced by various semiconductor manufacturers, including Infineon Technologies, ON Semiconductor, and others. Here are some key features and specifications of the IRF730:

MOSFET Type: The IRF730 is an N-channel enhancement-mode MOSFET. In an enhancement-mode MOSFET, the device conducts when a voltage is applied to the gate terminal, unlike depletion-mode MOSFETs, which conduct by default until a voltage is applied to the gate to turn them off.

Voltage and Current Ratings: The IRF730 typically operates with a drain-source voltage (VDS) rating of around 400 volts and a continuous drain current (ID) rating of several amperes, making it suitable for medium-power applications.

Low On-Resistance: The IRF730 features low on-resistance (RDS(on)), which results in reduced conduction losses when the MOSFET is fully turned on. This characteristic is essential for efficient power conversion and switching applications.

High-Speed Switching: With its low gate charge and intrinsic capacitances, the IRF730 is capable of high-speed switching, making it suitable for applications requiring fast switching frequencies, such as power supplies, motor drives, and inverters.

TO-220 Package: The IRF730 is commonly available in a TO-220 package, which provides good thermal performance and ease of mounting on a heatsink for heat dissipation in high-power applications.

Application: The IRF730 is commonly used in various electronic circuits and applications, including switching regulators, DC-DC converters, motor control circuits, power amplifiers, and electronic relays.

Gate-Source Threshold Voltage (VGS(th)): The gate-source threshold voltage specifies the minimum voltage required between the gate and source terminals to turn the MOSFET on. This parameter varies among individual devices and should be considered in circuit design.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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