IRF640N Datasheet, PDF - Datasheet Search Engine

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IRF640N Datasheet, PDF

Search Partnumber : Match&Start with "IRF640N" - Total : 34 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF640N	155Kb/11P	Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
Fairchild Semiconductor	IRF640N	160Kb/11P	N-Channel Power MOSFETs 200V, 18A, 0.15ohm
International Rectifier	IRF640N	240Kb/11P	HEXFET Power MOSFET
International Rectifier	IRF640N	248Kb/12P	Advanced Process Technology
Inchange Semiconductor ...	IRF640N	201Kb/2P	N-Channel MOSFET Transistor
Inchange Semiconductor ...	IRF640N	338Kb/2P	N-Channel MOSFET Transistor
International Rectifier	IRF640NL	155Kb/11P	Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
Fairchild Semiconductor	IRF640NL	160Kb/11P	N-Channel Power MOSFETs 200V, 18A, 0.15ohm
International Rectifier	IRF640NL	240Kb/11P	HEXFET Power MOSFET
International Rectifier	IRF640NL	248Kb/12P	Advanced Process Technology
Kersemi Electronic Co.,...	IRF640NL	1Mb/11P	Advanced Process Technology
Inchange Semiconductor ...	IRF640NL	288Kb/2P	Isc N-Channel MOSFET Transistor
International Rectifier	IRF640NLPBF	300Kb/12P	HEXFET짰 Power MOSFET
International Rectifier	IRF640NLPBF	341Kb/11P	Advanced Process Technology
Kersemi Electronic Co.,...	IRF640NLPBF	8Mb/11P	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature
International Rectifier	IRF640NLPBF	341Kb/11P	Advanced Process Technology
	IRF640NPBF	300Kb/12P	HEXFET짰 Power MOSFET
	IRF640NPBF	341Kb/11P	Advanced Process Technology
Kersemi Electronic Co.,...	IRF640NPBF	8Mb/11P	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature
International Rectifier	IRF640NPBF	341Kb/11P	Advanced Process Technology

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Brief Description of IRF640N

The IRF640N is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching and efficient power handling in a wide range of electronic circuits. Manufactured by International Rectifier (now part of Infineon Technologies), the IRF640N is widely used in applications such as power supplies, motor drivers, DC-DC converters, and inverters.

This MOSFET is capable of handling high voltages and currents, with a drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of up to 18A, and a low on-resistance (R_DS(on)) of around 0.18 ohms, making it suitable for medium- to high-power applications. It also features a fast switching speed and low gate charge, allowing for efficient high-frequency operation.

The IRF640N is typically packaged in a TO-220 form factor, which provides good thermal performance and allows for easy heat sinking when mounted on PCBs. It is often used in circuits where efficient power control and switching are needed, especially in environments with high voltage and moderate current demands.

Overall, the IRF640N is a durable and reliable power MOSFET that offers excellent performance for switching and amplification tasks in both industrial and consumer electronics.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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