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IRF540 Datasheet, PDF

Search Partnumber : Match&Start with "IRF540" - Total : 99 ( 1/5 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	IRF540	86Kb/9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
STMicroelectronics	IRF540	53Kb/6P	N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET Apr-1998
STMicroelectronics	IRF540	311Kb/8P	N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET Feb-2003
Vishay Siliconix	IRF540	1Mb/8P	Power MOSFET 16-Jun-08
	IRF540	282Kb/9P	Power MOSFET 21-Mar-11
	IRF540	156Kb/8P	Power MOSFET 02-Aug-2021
Fairchild Semiconductor	IRF540	146Kb/5P	N-Channel Power MOSFETs, 27 A, 60-100V
International Rectifier	IRF540	177Kb/6P	HEXFET POWER MOSFET
Kersemi Electronic Co.,...	IRF540	6Mb/7P	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
Nell Semiconductor Co.,...	IRF540	338Kb/7P	N-Channel Power MOSFET
New Jersey Semi-Conduct...	IRF540	984Kb/3P	25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
New Jersey Semi-Conduct...	IRF540	103Kb/3P	N-Channel Power MOSFETs, 27 A, 60-100 V
First Silicon Co., Ltd	IRF540	1Mb/4P	N -Channel Power MOSFET (100V/27A)
SYC Electronica	IRF540	259Kb/7P	N-CHANNEL 100V - 0.055 W - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
Inchange Semiconductor ...	IRF540	308Kb/2P	N-Channel Power MOSFET
Nanjing International G...	IRF540	2Mb/7P	TO-220-3L Plastic-Encapsulate MOSFETS
SHENZHEN DOINGTER SEMIC...	IRF540	1Mb/5P	N-Channel MOSFET uses advanced trench technology
List of Unclassifed Man...	IRF540	2Mb/31P	SEMICONDUCTORS
Fairchild Semiconductor	IRF540A	256Kb/7P	Advanced Power MOSFET
Inchange Semiconductor ...	IRF540A	280Kb/2P	isc N-Channel MOSFET Transistor

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Brief Description of IRF540

The IRF540 is a popular power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronic circuits for high-power switching and amplification applications. It is part of the IRF series of power MOSFETs and is known for its ability to handle relatively high currents and voltages. Here are some key features and specifications of the IRF540 MOSFET:

Polarity: N-Channel.

The IRF540 is an N-channel MOSFET, which means it uses electron flow to switch and control electrical current.
Drain-Source Voltage (Vds): Typically rated at 100V.

The maximum voltage that can be applied between the drain and source terminals when the MOSFET is in the off state.
Continuous Drain Current (Id): Typically rated at 33A.

The maximum current the MOSFET can handle continuously in the on state.
On-Resistance (Rds(on): Typically low, often in the milliohm range.

The resistance between the drain and source terminals when the MOSFET is fully turned on.
Gate Threshold Voltage (Vgs(th)): Typically around 2V to 4V.

The voltage required to turn the MOSFET on.
Gate-Source Voltage (Vgs): Usually rated up to ±20V.

The maximum voltage that can be applied between the gate and source terminals.
Package: The IRF540 is typically available in TO-220 or TO-220AB packages, which provide good thermal performance and ease of mounting to heatsinks for cooling.

Applications: The IRF540 MOSFET is commonly used in high-power applications, such as switching power supplies, motor control circuits, amplifier output stages, and other applications that require high-current switching.

Heat Dissipation: The IRF540 can generate heat during operation, so adequate thermal management, including heatsinking, may be necessary for high-power applications.

Avalanche Energy Rating: The IRF540 has an avalanche energy rating, which specifies the amount of energy the MOSFET can safely absorb during transient voltage spikes.

Equivalent for IRF540

The IRF540 is an N-channel MOSFET commonly used for high-current switching applications, featuring a maximum drain-source voltage of 100V and a continuous drain current of 28A. Several MOSFETs offer similar characteristics and can serve as replacements:

IRF540N:

An enhanced version of the IRF540, offering improved performance.
Maximum drain-source voltage: 100V.
Continuous drain current: 33A.
Lower on-resistance, resulting in higher efficiency.
IRFZ44N:

N-channel MOSFET with comparable voltage and current ratings.
Maximum drain-source voltage: 55V.
Continuous drain current: 49A.
Lower voltage rating; ensure compatibility with your application.
IRLZ44N:

Logic-level N-channel MOSFET suitable for low-voltage gate drive.
Maximum drain-source voltage: 55V.
Continuous drain current: 47A.
Ideal for interfacing with microcontrollers.
STP55NF06:

N-channel MOSFET with similar specifications.
Maximum drain-source voltage: 60V.
Continuous drain current: 50A.
Suitable for various switching applications.
BUZ11:

N-channel MOSFET with comparable ratings.
Maximum drain-source voltage: 50V.
Continuous drain current: 30A.
Commonly used in automotive applications.
When selecting a replacement, consider the following factors:

Voltage and Current Ratings: Ensure the substitute MOSFET can handle the required voltage and current levels in your circuit.
On-Resistance (R_DS(on)): Lower on-resistance results in higher efficiency and reduced heat generation.
Gate Threshold Voltage: Verify that the gate drive voltage in your design is sufficient to fully turn on the MOSFET.
Package Type and Pin Configuration: Confirm that the physical package and pinout are compatible with your circuit layout.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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