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IRF510 Datasheet, PDF

Search Partnumber : Match&Start with "IRF510" - Total : 33 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	IRF510	1Mb/8P	Power MOSFET 30-Jun-08
Vishay Siliconix	IRF510	158Kb/8P	Power MOSFET 02-Aug-2021
Supertex, Inc	IRF510	70Kb/2P	N-Channel Enhancement-Mode Vertical DMOS Power FETs
Fairchild Semiconductor	IRF510	151Kb/5P	N-Channel Power MOSFETs, 5.5 A, 60-100V
Intersil Corporation	IRF510	70Kb/7P	5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET November 1999
International Rectifier	IRF510	175Kb/6P	Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
Harris Corporation	IRF510	71Kb/7P	4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
New Jersey Semi-Conduct...	IRF510	111Kb/2P	Repetitive Avalanche Rated
Inchange Semiconductor ...	IRF510	45Kb/2P	isc N-Channel Mosfet Transistor
ARTSCHIP ELECTRONICS CO...	IRF510	374Kb/5P	N-Channel Power Mosfets
SYC Electronica	IRF510	132Kb/6P	5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
List of Unclassifed Man...	IRF510	2Mb/31P	SEMICONDUCTORS
Fairchild Semiconductor	IRF510-513	151Kb/5P	N-Channel Power MOSFETs, 5.5 A, 60-100V
Fairchild Semiconductor	IRF510A	252Kb/7P	Advanced Power MOSFET
Vishay Siliconix	IRF510N	1Mb/8P	Power MOSFET 30-Jun-08
Vishay Siliconix	IRF510N	176Kb/9P	Power MOSFET 30-May-11
International Rectifier	IRF510N	175Kb/6P	Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
Intersil Corporation	IRF510N	70Kb/7P	5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET November 1999
New Jersey Semi-Conduct...	IRF510N	111Kb/2P	Repetitive Avalanche Rated
Fairchild Semiconductor	IRF510N	252Kb/7P	Advanced Power MOSFET

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Brief Description of IRF510

The IRF510 is a widely used N-channel MOSFET transistor. MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are a type of transistor that is used to amplify or switch electronic signals in various devices, from small electronics to large-scale electrical systems.

The IRF510, in particular, is known for its ease of drive, relatively high current handling ability, and efficiency. It's often utilized in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high-speed drivers.

Here are some of the key characteristics of the IRF510 MOSFET:

VDSS (Drain-Source Breakdown Voltage): It can handle a maximum drain-source voltage, typically around 100V, which means it can be used in circuits with high voltage requirements.

ID (Continuous Drain Current): This specifies the amount of current that can flow through the drain continuously, with the IRF510 usually rated around 5.6A.

RDS(on) (Drain-Source On-Resistance): This is the resistance between the drain and the source when the transistor is on. For the IRF510, this is typically quite low, which makes it efficient in terms of power dissipation.

VGS(th) (Gate Threshold Voltage): This is the voltage at which the MOSFET begins to turn on. For the IRF510, the gate threshold voltage is typically around 2V to 4V.

Power Dissipation: The maximum power that the IRF510 can handle without exceeding its maximum junction temperature is typically around 43 watts, which is adequate for many applications.

Configurations: It is available in a TO-220 package which is suitable for through-hole mounting, making it easy to use in prototyping and production.

Operating Temperature: It usually operates within a temperature range of -55°C to +175°C, providing a good range for various environments.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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