IPT111N20NFD Datasheet, PDF

Manufacturer

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IPT111N20NFD	1,010Kb/10P	OptiMOS짧3 Power-Transistor, 200 V Rev.2.1,2016-02-23

Manufacturer	Part #	Datasheet	Description
Samtec, Inc	IPT1-115-01-S-D-RA	508Kb/1P	SHROUDED POWER CONNECTOR SET
Pepperl+Fuchs Inc.	IPT1-FP	481Kb/2P	Read/write head
IP SEMICONDUCTOR CO., L...	IPT1206-BEA	226Kb/4P	High current density due to double mesa technology
	IPT1206-BEB	226Kb/4P	High current density due to double mesa technology
	IPT1206-BEF	237Kb/4P	High current density due to double mesa technology
	IPT1206-CEA	226Kb/4P	High current density due to double mesa technology
	IPT1206-CEB	226Kb/4P	High current density due to double mesa technology
	IPT1206-CEF	237Kb/4P	High current density due to double mesa technology
	IPT1206-SEA	226Kb/4P	High current density due to double mesa technology
	IPT1206-SEB	226Kb/4P	High current density due to double mesa technology
	IPT1206-SEF	237Kb/4P	High current density due to double mesa technology
	IPT1206-TEA	226Kb/4P	High current density due to double mesa technology
	IPT1206-TEB	226Kb/4P	High current density due to double mesa technology
	IPT1206-TEF	237Kb/4P	High current density due to double mesa technology
	IPT1208-BEA	226Kb/4P	High current density due to double mesa technology
	IPT1208-BEB	225Kb/4P	High current density due to double mesa technology
	IPT1208-BEF	234Kb/4P	High current density due to double mesa technology
	IPT1208-CEA	226Kb/4P	High current density due to double mesa technology
	IPT1208-CEB	225Kb/4P	High current density due to double mesa technology
	IPT1208-CEF	234Kb/4P	High current density due to double mesa technology

IPT111N20NFD Datasheet ,PDF