| Manufacturer | Part # | Datasheet | Description |
 Infineon Technologies A... |
IPD14N06S2-80
|
153Kb/8P |
OptiMOS Power-Transistor
Rev. 1.0 2006-07-18 |
 BYCHIP ELECTRONICS CO.,... |
IPD14N06S2-80
|
624Kb/5P |
N-channel Enhancement Mode Power MOSFET
v1.0 |
 Roithner LaserTechnik G... |
IPD14-12-5T-2
|
445Kb/2P |
ingaas photodiode
|
 Infineon Technologies A... |
IPD144N06NG
|
380Kb/9P |
OptiMOS짰 Power-Transistor
Rev.1.22 2008-07-22 |
 Samtec, Inc |
IPD1-02-D
|
269Kb/2P |
.100 SHROUDED CONTACT BODY
|
|
IPD1-02-D-K
|
269Kb/2P |
100 SHROUDED CONTACT BODY
|
|
IPD1-02-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-02-S
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-02-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-03-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-03-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-04-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-04-S-K
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-04-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-05-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-05-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-06-D-K
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-06-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-06-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
|
IPD1-08-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |