| Manufacturer | Part # | Datasheet | Description |
Shenzhen Huazhimei Semi... |
HM20N60A
|
532Kb/10P |
the silicon N-channel Enhanced VDMOSFETs
|
|
HM20N60
|
817Kb/10P |
the silicon N-channel Enhanced VDMOSFETs
|
|
HM20N65F
|
875Kb/10P |
the silicon N-channel Enhanced VDMOSFETs
|
|
HM20N03K
|
479Kb/6P |
650V N-Channel MOSFET
|
|
HM20N06
|
661Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
|
HM20N06KA
|
549Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
|
HM20N120AB
|
804Kb/8P |
KEDA PT IGBTs offer lower losses and higher energy efficiency for application
|
|
HM20N120T
|
968Kb/9P |
H&M NPT IGBTs offer lower losses and higher energy
|
|
HM20N120TB
|
813Kb/8P |
KEDA PT IGBTs offer lower losses and higher energy efficiency for application
|
|
HM20N15
|
400Kb/6P |
NCE N-Channel Enhancement Mode Power MOSFET
|
|
HM20N15A
|
836Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
|
HM20N15D
|
883Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
|
HM20N15K
|
524Kb/6P |
High density cell design for ultra low Rdson
|
|
HM20N50A
|
792Kb/7P |
500V N-Channel MOSFET
|
|
HM20N50F
|
868Kb/7P |
500V N-Channel MOSFET
|
|
HM2002
|
1Mb/8P |
1.2A built-in power tube step-down LED constant current driver IC
|
|
HM2006
|
549Kb/5P |
High and Low Side Driver
|
|
HM2006A
|
549Kb/5P |
High and Low Side Driver
|
|
HM2006B
|
549Kb/5P |
High and Low Side Driver
|
List of Unclassifed Man... |
HM2007
|
1Mb/21P |
SPEECH RECOGNITION
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