| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
GT40T301
|
835Kb/16P |
Discrete IGBTs
|
|
GT40T301
|
166Kb/6P |
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
|
GT40T301
|
311Kb/6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
|
GT40T301
|
166Kb/6P |
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
|
GT40T302
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT40T302
|
173Kb/6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
|
GT40T101
|
835Kb/16P |
Discrete IGBTs
|
|
GT40T101
|
207Kb/3P |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
|
 Goford Semiconductor |
GT400P10K
|
586Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
GT400P10M
|
1,018Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
GT400P10T
|
931Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
 GREEGOO Electric Co.,Lt... |
GT4044RA2
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4044RD1
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4044RD3
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4044ZA2
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4044ZD1
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4044ZD3
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4048RA2
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4048RD1
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
|
GT4048RD3
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|