| Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
GT15M321
|
426Kb/6P |
HIGH POWER SWITCHING APPLICATIONS
|
Goford Semiconductor |
GT150N12T
|
1Mb/6P |
N-Channel Enhancement Mode Power MOSFET
|
Hirose Electric |
GT15A-2024SCF
|
165Kb/7P |
HID Lamp DII Sockets
|
|
GT15B-3S
|
165Kb/7P |
HID Lamp DII Sockets
|
|
GT15B-3S-F
|
165Kb/7P |
HID Lamp DII Sockets
|
|
GT15B-CP
|
165Kb/7P |
HID Lamp DII Sockets
|
|
GT15B-SC-K
|
165Kb/7P |
HID Lamp DII Sockets
|
|
GT15B-SU
|
165Kb/7P |
HID Lamp DII Sockets
|
Toshiba Semiconductor |
GT15G101
|
200Kb/3P |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
|
GT15G101
|
835Kb/16P |
Discrete IGBTs
|
|
GT15J101
|
208Kb/3P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
GT15J101
|
835Kb/16P |
Discrete IGBTs
|
|
GT15J102
|
207Kb/3P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
GT15J102
|
835Kb/16P |
Discrete IGBTs
|
|
GT15J103
|
190Kb/3P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
GT15J103
|
835Kb/16P |
Discrete IGBTs
|
|
GT15J121
|
102Kb/2P |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
|
|
GT15J301
|
293Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
GT15J301
|
492Kb/7P |
HIGH POWER SWITCHING APPLICATIONS
|
|
GT15J301
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand