| Manufacturer | Part # | Datasheet | Description |
 Diodes Incorporated |
DMN10H170SVT-13
|
521Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H170SVT-13
|
521Kb/6P |
Low Gate Threshold Voltage
Rev 2 |
|
DMN10H170SVT-7
|
521Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H170SVT-7
|
521Kb/6P |
Low Gate Threshold Voltage
Rev 2 |
|
DMN10H170SVTQ
|
504Kb/8P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H170SVTQ-13
|
504Kb/8P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H170SVTQ-7
|
504Kb/8P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H170SVT
|
521Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H170SFDE
|
438Kb/6P |
Halogen and Antimony Free. ?쏥reen??Device (Note 3)
Rev 4 |
|
DMN10H170SFDE-13
|
438Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 4 |
|
DMN10H170SFDE-13
|
438Kb/6P |
Halogen and Antimony Free. ?쏥reen??Device (Note 3)
Rev 4 |
|
DMN10H170SFDE-7
|
438Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 4 |
|
DMN10H170SFDE-7
|
438Kb/6P |
Halogen and Antimony Free. ?쏥reen??Device (Note 3)
Rev 4 |
|
DMN10H170SFDE
|
438Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 4 |
|
DMN10H170SFG
|
301Kb/6P |
Qualified to AEC-Q101 Standards for High Reliability
Rev 4 |
|
DMN10H170SFG-13
|
301Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
Rev 4 |
|
DMN10H170SFG-13
|
301Kb/6P |
Qualified to AEC-Q101 Standards for High Reliability
Rev 4 |
|
DMN10H170SFG-7
|
301Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
Rev 4 |
|
DMN10H170SFG-7
|
301Kb/6P |
Qualified to AEC-Q101 Standards for High Reliability
Rev 4 |
|
DMN10H170SFGQ
|
517Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
March 2019 Rev. 2 - 2 |