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BSS84 Datasheet, PDF

Search Partnumber : Match&Start with "BSS84" - Total : 209 ( 1/11 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BSS84	89Kb/12P	P-channel enhancement mode vertical D-MOS transistor 1997 Jun 18
Taiwan Semiconductor Co...	BSS84	397Kb/6P	P-Channel Power MOSFET Version: A2007
ON Semiconductor	BSS84	196Kb/7P	P-Channel Enhancement Mode Field-Effect Transistor October, 2021 ??Rev. 5
Diodes Incorporated	BSS84	289Kb/6P	P-CHANNEL ENHANCEMENT MODE MOSFET Rev 22
	BSS84	48Kb/2P	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30149 Rev. 5 - 2
	BSS84	106Kb/4P	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Rev. 14 - 2 February 2010
NXP Semiconductors	BSS84	70Kb/11P	P-channel enhancement mode vertical DMOS transistor Rev. 06-16 December 2008
Diodes Incorporated	BSS84	103Kb/3P	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30149 Rev. 11 - 2
Pan Jit International I...	BSS84	139Kb/4P	P-CHANNEL ENHANCEMENT MODE MOSFET
Weitron Technology	BSS84	127Kb/4P	Small Signal MOSFET P-Channel
Fairchild Semiconductor	BSS84	285Kb/10P	P-Channel Enhancement Mode Field Effect Transistor
Guilin Strong Micro-Ele...	BSS84	303Kb/3P	SOT-23 Field Effect Transistors
Fairchild Semiconductor	BSS84	247Kb/6P	P-Channel Enhancement Mode Field-Effect Transistor
Nanjing International G...	BSS84	792Kb/5P	Energy Efficient
Bruckewell Technology L...	BSS84	328Kb/4P	P-Channel 20-V (D-S) MOSFET
ZP Semiconductor	BSS84	372Kb/5P	P-Channel Enhancement Mode MOSFET
Shanghai Shunye Electro...	BSS84	1Mb/3P	MOSFET(P-Channel) V2.22
Siemens Semiconductor G...	BSS84	73Kb/7P	SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
Chino-Excel Technology	BSS84	468Kb/5P	P-Channel Enhancement Mode MOSFET
Micro Commercial Compon...	BSS84	807Kb/4P	P-Channel Enhancement Mode Field Effect Transistor

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Brief Description of BSS84

The BSS84 is a part designation typically used for a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are commonly used as switches or amplifiers in various electronic applications.

Here are some general specifications for the BSS84 MOSFET:

Maximum Drain-Source Voltage (VDS): Typically around 50 volts
Maximum Drain Current (ID): Typically around 130 milliamperes
Maximum Gate-Source Voltage (VGS): Typically around ±20 volts
Threshold Voltage (VGS(th)): Typically around 0.7 to 3.0 volts
Drain-Source On-Resistance (RDS(on)): Typically around 10 ohms
Package Type: Typically SOT-23 (a small surface mount package)
The BSS84 MOSFET is commonly used in low-power switching applications, such as in portable electronics, small signal amplifiers, and general-purpose circuits.

Equivalent for BSS84

A suitable replacement for the BSS84 P-channel MOSFET transistor is the BSP84.

The BSP84 is also a P-channel MOSFET transistor with similar characteristics and can be used as a replacement for the BSS84. It is commonly used in low-power switching applications and amplification in electronic circuits.

Here are some key similarities between the BSS84 and BSP84 transistors:

Drain-Source Voltage (VDS): The BSP84 typically has a similar maximum drain-source voltage rating as the BSS84.

Continuous Drain Current (ID): The BSP84 typically has a comparable maximum continuous drain current rating as the BSS84.

Total Power Dissipation (PD): The power dissipation capability of the BSP84 is usually similar to that of the BSS84.

Gate-Source Threshold Voltage (VGS(th)): The gate-source threshold voltage of the BSP84 is typically within a similar range as the BSS84.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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