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BSS123 Datasheet, PDF

Search Partnumber : Match&Start with "BSS123" - Total : 91 ( 1/5 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BSS123	56Kb/4P	N-channel enhancement mode vertical D-MOS transistor August 2000 Rev 1.000
ON Semiconductor	BSS123	202Kb/7P	N-Channel Logic Level Enhancement Mode Field Effect Transistor November, 2021 ??Rev. 10
Infineon Technologies A...	BSS123	3Mb/8P	SIPMOS??Small-Signal-Transistor Feature 2010-05-12
NXP Semiconductors	BSS123	29Kb/4P	N-channel TrenchMOS transistor August 2000-Rev 1.000
Diodes Incorporated	BSS123	67Kb/3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30366 Rev. 3 - 2
Infineon Technologies A...	BSS123	77Kb/8P	SIPMOS Small-Signal-Transistor 2002-12-10
Infineon Technologies A...	BSS123	128Kb/8P	SIPMOS Small-Signal-Transistor Rev. 1.41 2010-05-12
Diodes Incorporated	BSS123	128Kb/3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30366 Rev.8 - 2
Diodes Incorporated	BSS123	367Kb/4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30366 Rev. 6 - 2
Weitron Technology	BSS123	98Kb/3P	Power MOSFET N-Channel
Fairchild Semiconductor	BSS123	145Kb/5P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	BSS123	284Kb/10P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Siemens Semiconductor G...	BSS123	133Kb/8P	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Bruckewell Technology L...	BSS123	351Kb/5P	N-CHANNEL ENHANCEMENT MODE MOSFET
Shanghai Shunye Electro...	BSS123	937Kb/5P	N Channel MOSFET V2.22
TECH PUBLIC Electronics...	BSS123	1Mb/4P	N-Channel Enhancement Mode MOSFET
Micro Commercial Compon...	BSS123	627Kb/4P	N-Channel Enhancement Mode Field Effect Transistor
Nexperia B.V. All right...	BSS123	143Kb/5P	N-channel TrenchMOS transistor Logic level FET August 2000
Yangzhou yangjie electr...	BSS123	594Kb/6P	N-Channel Enhancement Mode Field Effect Transistor
Nanjing International G...	BSS123	1Mb/5P	SOT-23 Plastic-Encapsulate MOSFETS

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Brief Description of BSS123

The BSS123 is a part designation typically used for a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are commonly used as switches or amplifiers in various electronic applications.

Here are some general specifications for the BSS123 MOSFET:

Maximum Drain-Source Voltage (VDS): Typically around 100 volts
Maximum Drain Current (ID): Typically around 170 milliamperes
Maximum Gate-Source Voltage (VGS): Typically around ±20 volts
Threshold Voltage (VGS(th)): Typically around 0.7 to 3.0 volts
Drain-Source On-Resistance (RDS(on)): Typically around 6 ohms
Package Type: Typically SOT-23 (a small surface mount package)
The BSS123 MOSFET is commonly used in low-power switching applications, such as in portable electronics, small signal amplifiers, and general-purpose circuits.

Equivalent for BSS123

A suitable replacement for the BSS123 N-channel MOSFET transistor is the 2N7002.

The 2N7002 is also an N-channel MOSFET transistor with similar characteristics and widely available as a replacement for the BSS123. It can be used in low-power switching applications and amplification in electronic circuits.

Here are some key similarities between the BSS123 and 2N7002 transistors:

Drain-Source Voltage (VDS): The 2N7002 typically has a similar maximum drain-source voltage rating as the BSS123.

Continuous Drain Current (ID): The 2N7002 typically has a comparable maximum continuous drain current rating as the BSS123.

Total Power Dissipation (PD): The power dissipation capability of the 2N7002 is usually similar to that of the BSS123.

Gate-Source Threshold Voltage (VGS(th)): The gate-source threshold voltage of the 2N7002 is typically within a similar range as the BSS123.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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