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BC517 Datasheet, PDF

Search Partnumber : Match&Start with "BC517" - Total : 29 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	BC517	148Kb/6P	Darlington Transistors(NPN Silicon) 1996
NXP Semiconductors	BC517	43Kb/8P	NPN Darlington transistor 1999 Apr 23
ON Semiconductor	BC517	71Kb/6P	Darlington Transistors NPN Silicon January, 2006 ??Rev. 3
SEMTECH ELECTRONICS LTD...	BC517	79Kb/1P	NPN Silicon Darlington Transistor
ON Semiconductor	BC517	82Kb/6P	Darlington Transistors March, 2007 ??Rev. 4
	BC517	621Kb/6P	NPN Darlington Transistor September-2017, Rev. 2
	BC517	171Kb/5P	NPN Darlington Transistor December, 2023 - Rev. 3
Motorola, Inc	BC517	206Kb/6P	Darlington Transistors
Siemens Semiconductor G...	BC517	138Kb/4P	NPN Silicon Darlington Transistor (High current gain High collector current)
KEC(Korea Electronics)	BC517	181Kb/2P	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR)
Micro Electronics	BC517	68Kb/1P	COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR
Fairchild Semiconductor	BC517	29Kb/3P	NPN Darlington Transistor
KEC(Korea Electronics)	BC517	31Kb/1P	TO-92 PACKAGE
KEC(Korea Electronics)	BC517	40Kb/2P	EPITAXIAL PLANAR NPN TRANSISTOR
Fairchild Semiconductor	BC517	32Kb/3P	NPN Darlington Transistor
ON Semiconductor	BC517-D74Z	621Kb/6P	NPN Darlington Transistor September-2017, Rev. 2
ON Semiconductor	BC517-D74Z	171Kb/5P	NPN Darlington Transistor December, 2023 - Rev. 3
Cystech Electonics Corp...	BC517A3	270Kb/6P	General Purpose NPN Epitaxial Planar Transistor
ON Semiconductor	BC517G	71Kb/6P	Darlington Transistors NPN Silicon January, 2006 ??Rev. 3
ON Semiconductor	BC517RL1	71Kb/6P	Darlington Transistors NPN Silicon January, 2006 ??Rev. 3

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Brief Description of BC517

The BC517 is a general-purpose PNP bipolar junction transistor (BJT) commonly used for low-power amplification and switching applications. Here are the key features and specifications of the BC517:

Transistor Type: The BC517 is a PNP bipolar junction transistor (BJT), meaning it consists of three semiconductor layers: N-doped (base), P-doped (emitter), and N-doped (collector).

Low Power Amplification: The BC517 is typically used for low-power amplification applications where small signal amplification is required.

PNP Configuration: Being a PNP transistor, the BC517 operates with a positive voltage at the base relative to the emitter for normal operation.

Low Collector-Emitter Voltage (VCEO): The maximum collector-emitter voltage (VCEO) of the BC517 is typically around -30 volts, indicating its suitability for low-voltage applications.

High Current Gain (hFE): The BC517 typically has a high DC current gain (hFE), allowing for efficient amplification of small input signals.

Medium Power Dissipation: The BC517 is designed to handle medium power levels, making it suitable for applications where moderate power amplification is required.

TO-92 Package: It is commonly available in a TO-92 package, which offers easy mounting on a printed circuit board (PCB) and good thermal performance for low-power applications.

Application: The BC517 is commonly used in low-power amplifier circuits, signal switching circuits, LED drivers, relay drivers, and other applications where small signal amplification or switching is needed.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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