| Manufacturer | Part # | Datasheet | Description |
 KEC(Korea Electronics) |
BC337
|
343Kb/2P |
EPITAXIAL PLANAR NPN TRANSISTOR
|
 ON Semiconductor |
BC337
|
65Kb/5P |
Amplifier Transistors NPN Silicon
September, 2005 ??Rev. 5 |
 Unisonic Technologies |
BC337
|
117Kb/3P |
SWITCHING AND AMPLIFIER APPLICATIONS
|
 ON Semiconductor |
BC337
|
146Kb/5P |
Amplifier Transistors
June, 2009 ??Rev. 7 |
 SeCoS Halbleitertechnol... |
BC337
|
367Kb/4P |
NPN Plastic-Encapsulate Transistor
|
 Unisonic Technologies |
BC337
|
148Kb/3P |
SWITCHING AND AMPLIFIER APPLICATIONS
|
 Guangdong Kexin Industr... |
BC337
|
888Kb/2P |
NPN Transistors
|
 SeCoS Halbleitertechnol... |
BC337
|
367Kb/4P |
NPN Plastic-Encapsulate Transistor
|
 KEC(Korea Electronics) |
BC337
|
343Kb/2P |
EPITAXIAL PLANAR NPN TRANSISTOR
|
 Unisonic Technologies |
BC337
|
177Kb/3P |
SWITCHING AND AMPLIFIER APPLICATION
|
 KEC(Korea Electronics) |
BC337
|
31Kb/1P |
TO-92 PACKAGE
|
 ON Semiconductor |
BC337
|
288Kb/7P |
NPN Epitaxial Silicon Transistor
September 2015 Rev. 1.5 |
|
BC337-025G
|
146Kb/5P |
Amplifier Transistors
June, 2009 ??Rev. 7 |
|
BC337-040G
|
146Kb/5P |
Amplifier Transistors
June, 2009 ??Rev. 7 |
 Motorola, Inc |
BC337-16
|
163Kb/4P |
Amplifier Transistor
|
 NXP Semiconductors |
BC337-16
|
47Kb/8P |
NPN general purpose transistor
1999 Apr 15 |
 Siemens Semiconductor G... |
BC337-16
|
150Kb/6P |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
 Diotec Semiconductor |
BC337-16
|
140Kb/2P |
Si-Epitaxial PlanarTransistors
|
 Fairchild Semiconductor |
BC337-16
|
25Kb/2P |
NPN General Purpose Amplifier
|
 ON Semiconductor |
BC337-16
|
82Kb/6P |
Amplifier Transistors
July, 2004 ??Rev. 4 |